500V 11A N-Channel MOSFET, 520mR Rds On, D2PAK Product overview: IRFS11N50APBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFS11N50APBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 128460-IRFS11N50APBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 170W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 52nC @ 10V
Max Input Capacitance: 1423pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 520 mOhm @ 6.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
N-Channel 500V 11A (Tc) 170W (Tc) Surface Mount D²PAK (TO-263)
N channel ;VBRDSS 500 V; RDSon 520 mOh
N channel ;VBRDSS 500 V; RDSon 520 mOh
N channel ;VBRDSS 500 V; RDSon 520 mOh
N CHANNEL MOSFET, 500V, 11A, D2-PAK; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:11A; DRAIN SOURCE VOLTAGE VDS:500V; ON RESISTANCE RDS(. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 500V 11A D2PAK
MOSFET Transistor, N Channel, 11 A, 500 V, 520 mohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 500V HEXFET MOSFET D2-PA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | RS Components, Ltd. | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFS11N50APBF | 128460-IRFS11N50APBF | IRFS11N50APBF-ND | 1808349 | 16342229 | IRFS11N50APBF | 38K2646 | IRFS11N50APBF |
| Product Name | N-Channel 500V 11A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS11N50APBF | Single FETs, MOSFETs | MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 11 A, 500 V, 520 Mohm, 10 V, 4 V Rohs Compliant Vishay | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| PD | 170000 milliwatts | 170000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
