P-Channel MOSFET, -200V, 3.6A, 1.5R, DPAK, Surface Mount Product overview: IRFR9220TRPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -200V, 3.6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -200V, 3.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR9220TRPBF can be used for catalog matching and distributor lookup.
MOSFET P-CH 200V 3.6A DPAK
P-Channel 200V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
P-Channel 200V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
P-Channel 200V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
Trans MOSFET P-CH 200V 3.6A 3-Pin(2+Tab)
Trans MOSFET P-CH 200V 3.6A 3-Pin(2+Tab)
Trans MOSFET P-CH 200V 3.6A 3-Pin(2+Tab)
Manufacturer: Vishay
Win Source Part Number: 016473-IRFR9220TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 340pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
MOSFET P-CH -200V HEXFET MOSFET D-PAK
MOSFET, P CHANNEL, -200V, -3.6A, TO-252-3; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
P CHANNEL MOSFET, -200V, 3.6A D-PAK, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.5W RoHS Compliant: Yes
MOSFET P-CH 200V 3.6A DPAK
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRFR9220TRPBF | IRFR9220TRPBF | IRFR9220PBFDKR-ND | 8120654 | 8120654P | 016473-IRFR9220TRPBF | IRFR9220TRPBF | 05W6864 | 63J7017 | IRFR9220TRPBF |
| Product Name | P-Channel SMD -200V 3.6A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR9220TRPBF | MOSFET | Mosfet, P Channel, -200V, -3.6A, To-252-3; Channel Type Vishay | P Channel Mosfet, -200V, 3.6A D-Pak, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| PD | 2500 milliwatts | 2500 milliwatts | 2500 to 42000 milliwatts | 2500 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 200 volts | 200 volts |
