Manufacturer: Vishay
Win Source Part Number: 104192-IRFR9220PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 340pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
P-Channel 200V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
MOSFET Transistor, P Channel, 3.6 A, 200 V, 1.5 ohm, -10 V, -4 V RoHS Compliant: Yes
P CHANNEL MOSFET, -200V, 3.6A D-PAK; Transistor Polarity:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.6A; On Resistance Rds(on):1.5ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET P-CH 200V 3.6A DPAK
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 104192-IRFR9220PBF | IRFR9220PBF-ND | IRFR9220PBF | 38K2644 | 63J7016 | IRFR9220PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR9220PBF | Single FETs, MOSFETs | MOSFET | Mosfet Transistor, P Channel, 3.6 A, 200 V, 1.5 Ohm, -10 V, -4 V Rohs Compliant Vishay | P Channel Mosfet, -200V, 3.6A D-Pak; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||
| V(BR)DSS | 200 volts | |||||
| PD | 2500 to 42000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) |