Manufacturer: Vishay
Win Source Part Number: 1047106-IRFR9210PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 1.9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.9nC @ 10V
Max Input Capacitance: 170pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 1.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient
P-Channel MOSFET, 200V, 1.9A, 3R, DPAK, Surface Mount Product overview: IRFR9210PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, 200V, 1.9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 200V, 1.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR9210PBF can be used for catalog matching and distributor lookup.
MOSFET P-CH 200V 1.9A DPAK
P-Channel 200V 1.9A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
P CHANNEL MOSFET, -200V, 1.9A D-PAK; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:1.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET P-CH 200V 1.9A DPAK
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1047106-IRFR9210PBF | 278-IRFR9210PBF | IRFR9210PBF | IRFR9210PBF-ND | 63J7013 | IRFR9210PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR9210PBF | P-Channel SMD 200V 1.9A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | P Channel Mosfet, -200V, 1.9A D-Pak; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |
| V(BR)DSS | 200 volts | 200 volts | ||||
| PD | 2500 to 25000 milliwatts | 2500 milliwatts | 2500 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |