MOSFET P-CH 100V 5.6A DPAK
P-Channel 100V 5.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount TO-252AA
P-Channel 100V 5.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount TO-252AA
P-Channel 100V 5.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount TO-252AA
MOSFET, P-CH, 100V, 5.6A, TO-252; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:5.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET, P-CH, 100V, 5.6A, TO-252; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:5.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET P-CH 100V 5.6A DPAK
| ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRFR9120TRLPBF-BE3 | 742-IRFR9120TRLPBF-BE3TR-ND | 82AH6199 | IRFR9120TRLPBF-BE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, 100V, 5.6A, To-252; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 100 volts | |||
| IDSS | 5600 milliamps | 5600 milliamps |
