MOSFET P-CH 100V 3.1A DPAK
Manufacturer: Vishay
Win Source Part Number: 103087-IRFR9110TRLPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 3.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.7nC @ 10V
Max Input Capacitance: 200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 1.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
P-CH MOSFET, 100V, 3.1A, 1.2 Ohm, TO-252, Surface Mount Product overview: IRFR9110TRLPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 100V, 3.1A, 1.2 Ohm, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 3.1A, 1.2 Ohm, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IRFR9110TRLPBF can be used for catalog matching and distributor lookup.
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| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFR9110TRLPBF | 103087-IRFR9110TRLPBF | 2088-IRFR9110TRLPBF | 742-IRFR9110TRLPBFTR-ND | 880-IRFR9110TRLPBF | IRFR9110TRLPBF | IRFR9110TRLPBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR9110TRLPBF | SMD 100V 3.1A 1.2 Ohm MOSFET Transistor | Single FETs, MOSFETs | MOSFET P-CH 100V 3.1A DPAK | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| IDSS | 3100 milliamps | ||||||
| PD | 2500 milliwatts | 2500 to 25000 milliwatts | 2500 milliwatts | 2500 milliwatts |
