P-Channel MOSFET, 100V, 3.1A, 1.2R, DPAK Product overview: IRFR9110PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 100V, 3.1A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 3.1A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR9110PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1047103-IRFR9110PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 3.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.7nC @ 10V
Max Input Capacitance: 200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 1.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
P-Channel 100V 3.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
MOSFET P-CH 100V 3.1A DPAK
POWER FIELD-EFFECT TRANSISTOR, 3.1A I(D), 100V, 1.2OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA DPAK-3. FREE 2 YEAR RADWELL WARRANTY
MOSFET P-CH -100V HEXFET MOSFET D-PAK
Trans MOSFET P-CH 100V 3.1A 3-Pin(2+Tab) DPAK
MOSFET Transistor, P Channel, 3.1 A, 100 V, 1.2 ohm, -10 V, -4 V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFR9110PBF | 1047103-IRFR9110PBF | IRFR9110PBF-ND | IRFR9110PBF | 16342121 | IRFR9110PBF | 880-IRFR9110PBF | 38K2640 |
| Product Name | P-Channel 100V 3.1A DPAK MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR9110PBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET | Trans MOSFET P-CH 100V 3.1A 3-Pin(2+Tab) DPAK | Mosfet Transistor, P Channel, 3.1 A, 100 V, 1.2 Ohm, -10 V, -4 V Rohs Compliant Vishay |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| PD | 2500 milliwatts | 2500 to 25000 milliwatts | 25000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 100 volts | -100 volts |
