Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFR9014TRR

Description
MOSFET P-CH 60V 5.1A DPAK
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Description
MOSFET P-CH 60V 5.1A DPAK
Request a Quote Datasheet

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Single FETs, MOSFETs - IRFR9014TRR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR9014TRR-ND
Single FETs, MOSFETs IRFR9014TRR-ND
MOSFET P-CH 60V 5.1A DPAK

MOSFET P-CH 60V 5.1A DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR9014TRR - 1047100-IRFR9014TRR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR9014TRR
1047100-IRFR9014TRR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR9014TRR 1047100-IRFR9014TRR
Manufacturer: Vishay Win Source Part Number: 1047100-IRFR9014TRR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 270pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 500 mOhm @ 3.1A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance Application Field: Used in Power Management

Manufacturer: Vishay
Win Source Part Number: 1047100-IRFR9014TRR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 270pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 500 mOhm @ 3.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR9014TRR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR9014TRR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR9014TRR
MOSFET P-CH 60V 5.1A DPAK

MOSFET P-CH 60V 5.1A DPAK

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFR9014TRR-ND 1047100-IRFR9014TRR IRFR9014TRR
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR9014TRR Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 60 volts
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