The Vishay P-Channel MOSFET, part number 82AH6198, features a maximum drain-source voltage of -60V and a continuous drain current rating of -5.1A. It is housed in a TO-252 package, suitable for surface mounting, and is designed for applications requiring fast switching and low on-resistance, with a specified R_DS(on) of 0.50Oc at a gate-source voltage of -10V. The device supports power dissipation levels up to 25W at a case temperature of 25¬8C, with a thermal resistance from junction to ambient of 110¬8C/W. It has a total gate charge of 12nC, making it efficient for dynamic applications. The MOSFET is also rated for repetitive avalanche conditions, enhancing its reliability in various circuit designs.
P-Channel 60V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount TO-252AA
P-Channel 60V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount TO-252AA
P-Channel 60V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount TO-252AA
MOSFET, P-CH, 60V, 5.1A, TO-252; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET, P-CH, 60V, 5.1A, TO-252; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET P-CH 60V 5.1A DPAK
| DigiKey | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 742-IRFR9014TRPBF-BE3DKR-ND | 82AH6198 | IRFR9014TRPBF-BE3 |
| Product Name | Single FETs, MOSFETs | Mosfet, P-Ch, 60V, 5.1A, To-252; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel |
