Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFR9010TR

The IRFR9010TR is a P-Channel MOSFET designed for power applications, featuring a maximum drain-source voltage (V_DS) of -50 V and a continuous drain current (I_D) rating of -5.3 A at a case temperature of 25 ¬8C. It has a maximum power dissipation of 25 W and an on-state resistance (R_DS(on)) of 0.50 Oc at a gate-source voltage (V_GS) of -10 V. The device is housed in a DPAK (TO-252) surface mount package, which facilitates easy integration into high-volume applications while minimizing stray inductances. The IRFR9010TR exhibits a total gate charge (Q_g) of 9.1 nC, with gate-source (Q_gs) and gate-drain (Q_gd) charges of 3.0 nC and 5.9 nC, respectively. It operates effectively within a temperature range of -55 ¬8C to +150 ¬8C. The device is suitable for applications such as computers, telecommunications equipment, and DC/DC converters, where efficient heat dissipation and fast switching capabilities are essential. Engineers should consider the IRFR9010TR for projects requiring reliable performance in power management and switching applications, particularly in environments where space and thermal management are critical.