Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR430APBF IRFR430APBF

Description
Manufacturer: Vishay Win Source Part Number: 017689-IRFR430APBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.7 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 017689-IRFR430APBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.7 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR430APBF - 017689-IRFR430APBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR430APBF
017689-IRFR430APBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR430APBF 017689-IRFR430APBF
Manufacturer: Vishay Win Source Part Number: 017689-IRFR430APBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.7 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 017689-IRFR430APBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 490pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.7 Ohm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFR430APBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR430APBF-ND
Single FETs, MOSFETs IRFR430APBF-ND
N-Channel 500V 5A (Tc) 110W (Tc) Surface Mount D-Pak

N-Channel 500V 5A (Tc) 110W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR430APBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR430APBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR430APBF
MOSFET N-CH 500V 5A DPAK

MOSFET N-CH 500V 5A DPAK

Supplier's Site
N Channel Mosfet, 500V, 5A, D-Pak; Channel Type Vishay - 63J6987 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 500V, 5A, D-Pak; Channel Type Vishay
63J6987
N Channel Mosfet, 500V, 5A, D-Pak; Channel Type Vishay 63J6987
N CHANNEL MOSFET, 500V, 5A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

N CHANNEL MOSFET, 500V, 5A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 500V HEXFET MOSFET D-PAK

MOSFET N-CH 500V HEXFET MOSFET D-PAK

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017689-IRFR430APBF IRFR430APBF-ND IRFR430APBF 63J6987 IRFR430APBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR430APBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 500V, 5A, D-Pak; Channel Type Vishay MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 500 volts
PD 110000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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