N channel ;VBRDSS 500 V; RDSon 3000 mO
N channel ;VBRDSS 500 V; RDSon 3000 mO
Manufacturer: Vishay
Win Source Part Number: 017687-IRFR420APBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 3.3A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 340pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
N-Channel 500V 3.3A (Tc) 83W (Tc) Surface Mount D-Pak
500V 3.3A N-Channel MOSFET, 3R Rds On, TO-252 Product overview: IRFR420APBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 3.3A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 3.3A, TO-252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR420APBF can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 500V, 3.3A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:3.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
MOSFET N-CH 500V 3.3A DPAK
| RS Components, Ltd. | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1808343 | 017687-IRFR420APBF | IRFR420APBF-ND | 278-IRFR420APBF | 99Y9386 | IRFR420APBF | IRFR420APBF |
| Product Name | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR420APBF | Single FETs, MOSFETs | N-Channel 500V 3.3A TO-252 MOSFET Transistor | Mosfet, N-Ch, 500V, 3.3A, To-252; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 500 volts | ||||||
| PD | 83000 milliwatts | 83000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
