Manufacturer: Vishay
Win Source Part Number: 137582-IRFR320PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 3.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.8 Ohm @ 1.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
N-Channel 400V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
N-Channel MOSFET, 400V, 3.1A, 1.8R, DPAK Product overview: IRFR320PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 400V, 3.1A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 3.1A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR320PBF can be used for catalog matching and distributor lookup.
MOSFET TRANSISTOR, N CHANNEL, 3.1 A, 400 V, 1.8 OHM, 10 V, 4 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 400V 3.1A DPAK
MOSFET N-CH 400V 3.1A DPAK
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Radwell International | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 137582-IRFR320PBF | IRFR320PBF-ND | 278-IRFR320PBF | 16342017 | IRFR320PBF | IRFR320PBF | IRFR320PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR320PBF | Single FETs, MOSFETs | N-Channel 400V 3.1A DPAK MOSFET Transistor | Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 400 volts | 400 volts | |||||
| PD | 2500 to 42000 milliwatts | 2500 milliwatts | 2500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
