Vishay Precision Group Channel Type Vishay IRFR220TRPBF.

Description
Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:42W; No. of Pins:3Pins RoHS Compliant: No
Description
Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:42W; No. of Pins:3Pins RoHS Compliant: No
Datasheet
Datasheet Summary
Powered by GS/AI

The IRFR220TRPBF is a surface-mount N-channel MOSFET from the Vishay Siliconix IRFR220 series, designed for high-efficiency switching applications. It features a drain-source voltage rating of 200 V, a maximum continuous drain current of 4.8 A at 25 °C, and a drain-source on-state resistance of 0.80 Ω at 10 V gate-source voltage. The device is packaged in a DPAK (TO-252) surface-mount package and supports repetitive avalanche operation with a repetitive avalanche energy of 4.2 mJ. It has a maximum junction-to-case thermal resistance of 3.0 °C/W and operates from -55 °C to +150 °C. Power dissipation is rated at 42 W at 25 °C for proper mounting conditions.

Datasheet Summary
Powered by GS/AI

The IRFR220TRPBF is a surface-mount N-channel MOSFET from the Vishay Siliconix IRFR220 series, designed for high-efficiency switching applications. It features a drain-source voltage rating of 200 V, a maximum continuous drain current of 4.8 A at 25 °C, and a drain-source on-state resistance of 0.80 Ω at 10 V gate-source voltage. The device is packaged in a DPAK (TO-252) surface-mount package and supports repetitive avalanche operation with a repetitive avalanche energy of 4.2 mJ. It has a maximum junction-to-case thermal resistance of 3.0 °C/W and operates from -55 °C to +150 °C. Power dissipation is rated at 42 W at 25 °C for proper mounting conditions.

Suppliers

Company
Product
Description
Supplier Links
Channel Type Vishay - 15AC3086 - Newark, An Avnet Company
Chicago, IL, United States
Channel Type Vishay
15AC3086
Channel Type Vishay 15AC3086
Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:42W; No. of Pins:3Pins RoHS Compliant: No

Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:42W; No. of Pins:3Pins RoHS Compliant: No

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 15AC3086
Product Name Channel Type Vishay
Package Type TO-3
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1006B-AZ - 906299-2SA1006B-AZ - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
MOSFETs - 1333356 - RS Components, Ltd.
RS Components, Ltd.
Specs
Transistor Type MOSFET
Polarity P-Channel
Package Type Dfn2020
View Details