Vishay Precision Group Single FETs, MOSFETs IRFR220PBF

Description
N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
Request a Quote Datasheet
Description
N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFR220PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR220PBF-ND
Single FETs, MOSFETs IRFR220PBF-ND
N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak

N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Single FETs, MOSFETs - IRFR220PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFR220PBF
Single FETs, MOSFETs IRFR220PBF
MOSFET N-CH 200V 4.8A DPAK

MOSFET N-CH 200V 4.8A DPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR220PBF - 069534-IRFR220PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR220PBF
069534-IRFR220PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR220PBF 069534-IRFR220PBF
Manufacturer: Vishay Win Source Part Number: 069534-IRFR220PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 4.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 260pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 800 mOhm @ 2.9A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 069534-IRFR220PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 4.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 260pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 800 mOhm @ 2.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFETs - 2567309P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567309P
MOSFETs 2567309P
N channel Mosfet

N channel Mosfet

Supplier's Site
MOSFETs - 2567308 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567308
MOSFETs 2567308
N channel Mosfet

N channel Mosfet

Supplier's Site
MOSFETs - 2567309 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567309
MOSFETs 2567309
N channel Mosfet

N channel Mosfet

Supplier's Site
Mosfet, N, 200V, 4.8A, D-Pak; Channel Type Vishay - 38K2609 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, 200V, 4.8A, D-Pak; Channel Type Vishay
38K2609
Mosfet, N, 200V, 4.8A, D-Pak; Channel Type Vishay 38K2609
MOSFET, N, 200V, 4.8A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Product Range:-RoHS Compliant: Yes

MOSFET, N, 200V, 4.8A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Product Range:-RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 200V HEXFET MOSFET D-PAK

MOSFET N-CH 200V HEXFET MOSFET D-PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR220PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR220PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR220PBF
MOSFET N-CH 200V 4.8A DPAK

MOSFET N-CH 200V 4.8A DPAK

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics RS Components, Ltd. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFR220PBF-ND IRFR220PBF 069534-IRFR220PBF 2567309P 38K2609 IRFR220PBF IRFR220PBF
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR220PBF MOSFETs Mosfet, N, 200V, 4.8A, D-Pak; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252 TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts 200 volts
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