MOSFET N-CH 200V 2.6A DPAK
Manufacturer: Vishay
Win Source Part Number: 017659-IRFR210TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Family Name: IRFR210
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 2.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.2nC @ 10V
Max Input Capacitance: 140pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.6A, 10V
Alternative Parts (Cross-Reference): IRLR210ATM; IRLR210ATF; IRLR210A;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
N-Channel 200V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
N-Channel 200V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
N-Channel 200V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
MOSFET N-CH 200V 2.6A DPAK
MOSFET 200V Vds, 20V Vgs DPAK (TO-252)
MOSFET, N CH, 200V, 2.6A, TO-252-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.6A; On Resistance Rds(on):1.5ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
N CHANNEL MOSFET, 200V, 2.6A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET, N-CH, 200V, 2.6A, TO-252 ROHS COMPLIANT: YES
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFR210TRPBF | 017659-IRFR210TRPBF | IRFR210PBFCT-ND | IRFR210TRPBF | IRFR210TRPBF | 05W6855 | 63J6925 | 56AJ9895 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210TRPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Ch, 200V, 2.6A, To-252-3; Transistor Polarity Vishay | N Channel Mosfet, 200V, 2.6A, D-Pak; Channel Type Vishay | Mosfet, N-Ch, 200V, 2.6A, To-252 Rohs Compliant Vishay |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 200 volts | 200 volts | ||||||
| IDSS | 2600 milliamps | 2600 milliamps | 2600 milliamps | |||||
| PD | 2500 milliwatts | 2500 to 25000 milliwatts |
