Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFR1N60APBF

Description
N-Channel 600V 1.4A (Tc) 36W (Tc) Surface Mount D-Pak
  • Single FETs, MOSFETs - IRFR1N60APBF-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR1N60APBF - 117662-IRFR1N60APBF - Win Source Electronics
    Win Source Electronics
  • N Channel Mosfet, 600V, 1.4A, D-Pak; Channel Type Vishay - 63J6908 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR1N60APBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 600V 1.4A (Tc) 36W (Tc) Surface Mount D-Pak
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFR1N60APBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR1N60APBF-ND
Single FETs, MOSFETs IRFR1N60APBF-ND
N-Channel 600V 1.4A (Tc) 36W (Tc) Surface Mount D-Pak

N-Channel 600V 1.4A (Tc) 36W (Tc) Surface Mount D-Pak

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR1N60APBF - 117662-IRFR1N60APBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR1N60APBF
117662-IRFR1N60APBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR1N60APBF 117662-IRFR1N60APBF
Manufacturer: Vishay Win Source Part Number: 117662-IRFR1N60APBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 36W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1.4A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 229pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 7 Ohm @ 840mA, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 117662-IRFR1N60APBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 36W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1.4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 229pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 7 Ohm @ 840mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
N Channel Mosfet, 600V, 1.4A, D-Pak; Channel Type Vishay - 63J6908 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 600V, 1.4A, D-Pak; Channel Type Vishay
63J6908
N Channel Mosfet, 600V, 1.4A, D-Pak; Channel Type Vishay 63J6908
N CHANNEL MOSFET, 600V, 1.4A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:1.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 600V, 1.4A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:1.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR1N60APBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR1N60APBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR1N60APBF
MOSFET N-CH 600V 1.4A DPAK

MOSFET N-CH 600V 1.4A DPAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFR1N60APBF
MOSFET IRFR1N60APBF
MOSFET N-Chan 600V 1.4 Amp

MOSFET N-Chan 600V 1.4 Amp

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFR1N60APBF-ND 117662-IRFR1N60APBF 63J6908 IRFR1N60APBF IRFR1N60APBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR1N60APBF N Channel Mosfet, 600V, 1.4A, D-Pak; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 600 volts
PD 36000 milliwatts
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