Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR110TRPBF IRFR110TRPBF

Description
Manufacturer: Vishay Win Source Part Number: 119816-IRFR110TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Family Name: IRFR110 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 4.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.3nC @ 10V Max Input Capacitance: 180pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 540 mOhm @ 2.6A, 10V Alternative Parts (Cross-Reference): IRLR110ATM; MTD6N10E; IRLR110A; IRLR110ATF; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 119816-IRFR110TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Family Name: IRFR110 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 4.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.3nC @ 10V Max Input Capacitance: 180pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 540 mOhm @ 2.6A, 10V Alternative Parts (Cross-Reference): IRLR110ATM; MTD6N10E; IRLR110A; IRLR110ATF; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR110TRPBF - 119816-IRFR110TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR110TRPBF
119816-IRFR110TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR110TRPBF 119816-IRFR110TRPBF
Manufacturer: Vishay Win Source Part Number: 119816-IRFR110TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Family Name: IRFR110 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 4.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.3nC @ 10V Max Input Capacitance: 180pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 540 mOhm @ 2.6A, 10V Alternative Parts (Cross-Reference): IRLR110ATM; MTD6N10E; IRLR110A; IRLR110ATF; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 119816-IRFR110TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Family Name: IRFR110
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 4.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.3nC @ 10V
Max Input Capacitance: 180pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 540 mOhm @ 2.6A, 10V
Alternative Parts (Cross-Reference): IRLR110ATM; MTD6N10E; IRLR110A; IRLR110ATF;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
N-Channel 100V 4.3A DPAK MOSFET Transistor
278-IRFR110TRPBF
N-Channel 100V 4.3A DPAK MOSFET Transistor 278-IRFR110TRPBF
N-Channel MOSFET, 100V, 4.3A, 540mR Rds On, DPAK Product overview: IRFR110TRPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 4.3A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 4.3A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR110TRPBF can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 100V, 4.3A, 540mR Rds On, DPAK Product overview: IRFR110TRPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 4.3A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 4.3A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR110TRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFR110PBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR110PBFTR-ND
Single FETs, MOSFETs IRFR110PBFTR-ND
N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Single FETs, MOSFETs - IRFR110PBFCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR110PBFCT-ND
Single FETs, MOSFETs IRFR110PBFCT-ND
N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Single FETs, MOSFETs - IRFR110PBFDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR110PBFDKR-ND
Single FETs, MOSFETs IRFR110PBFDKR-ND
N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Single FETs, MOSFETs - IRFR110TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFR110TRPBF
Single FETs, MOSFETs IRFR110TRPBF
MOSFET N-CH 100V 4.3A DPAK

MOSFET N-CH 100V 4.3A DPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR110TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR110TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR110TRPBF
MOSFET N-CH 100V 4.3A DPAK

MOSFET N-CH 100V 4.3A DPAK

Supplier's Site
Transistor - 16341893 - Radwell International
Willingboro, NJ, United States
Transistor
16341893
Transistor 16341893
POWER FIELD-EFFECT TRANSISTOR, 4.3A I(D), 100V, 0.54OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 4.3A I(D), 100V, 0.54OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Chan 100V 4.3 Amp

MOSFET N-Chan 100V 4.3 Amp

Buy Now Datasheet
Mosfet, N Channel, 100V, 4.3A, To-252-3; Transistor Polarity Vishay - 05W6853 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 100V, 4.3A, To-252-3; Transistor Polarity Vishay
05W6853
Mosfet, N Channel, 100V, 4.3A, To-252-3; Transistor Polarity Vishay 05W6853
MOSFET, N CHANNEL, 100V, 4.3A, TO-252-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(on):0.54ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

MOSFET, N CHANNEL, 100V, 4.3A, TO-252-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(on):0.54ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Supplier's Site
N Channel Mosfet, 100V, 4.3A, To-252-3; Transistor Polarity Vishay - 31K1963 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 4.3A, To-252-3; Transistor Polarity Vishay
31K1963
N Channel Mosfet, 100V, 4.3A, To-252-3; Transistor Polarity Vishay 31K1963
N CHANNEL MOSFET, 100V, 4.3A, TO-252-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(on):0.54ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 4.3A, TO-252-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(on):0.54ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, N Channel, 4.3 A, 100 V, 0.54 Ohm, 10 V, 4 V Rohs Compliant Vishay - 97W2281 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 4.3 A, 100 V, 0.54 Ohm, 10 V, 4 V Rohs Compliant Vishay
97W2281
Mosfet Transistor, N Channel, 4.3 A, 100 V, 0.54 Ohm, 10 V, 4 V Rohs Compliant Vishay 97W2281
MOSFET Transistor, N Channel, 4.3 A, 100 V, 0.54 ohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 4.3 A, 100 V, 0.54 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Radwell International VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 119816-IRFR110TRPBF 278-IRFR110TRPBF IRFR110PBFTR-ND IRFR110TRPBF IRFR110TRPBF 16341893 IRFR110TRPBF 05W6853 97W2281
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR110TRPBF N-Channel 100V 4.3A DPAK MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor MOSFET Mosfet, N Channel, 100V, 4.3A, To-252-3; Transistor Polarity Vishay Mosfet Transistor, N Channel, 4.3 A, 100 V, 0.54 Ohm, 10 V, 4 V Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 2500 to 25000 milliwatts 2500 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount TO-3 TO-3
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