MOSFET N-CH 100V 4.3A DPAK
N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
Manufacturer: Vishay
Win Source Part Number: 119816-IRFR110TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Family Name: IRFR110
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 4.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.3nC @ 10V
Max Input Capacitance: 180pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 540 mOhm @ 2.6A, 10V
Alternative Parts (Cross-Reference): IRLR110ATM; MTD6N10E; IRLR110A; IRLR110ATF;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
POWER FIELD-EFFECT TRANSISTOR, 4.3A I(D), 100V, 0.54OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N CHANNEL, 100V, 4.3A, TO-252-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(on):0.54ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
N CHANNEL MOSFET, 100V, 4.3A, TO-252-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(on):0.54ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 4.3 A, 100 V, 0.54 ohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 100V 4.3A DPAK
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFR110TRPBF | IRFR110PBFTR-ND | 119816-IRFR110TRPBF | 16341893 | 05W6853 | 97W2281 | IRFR110TRPBF | IRFR110TRPBF |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR110TRPBF | Transistor | Mosfet, N Channel, 100V, 4.3A, To-252-3; Transistor Polarity Vishay | Mosfet Transistor, N Channel, 4.3 A, 100 V, 0.54 Ohm, 10 V, 4 V Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||
| IDSS | 4300 milliamps | 4300 milliamps | ||||||
| PD | 2500 milliwatts | 2500 to 25000 milliwatts |
