Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR110PBF IRFR110PBF

Description
Manufacturer: Vishay Win Source Part Number: 1047013-IRFR110PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 4.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.3nC @ 10V Max Input Capacitance: 180pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 540 mOhm @ 2.6A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR110PBF - 1047013-IRFR110PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFR110PBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR110PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 100V, 4.3A, 150Deg C, 25W; Channel Type Vishay - 38K2600 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1047013-IRFR110PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 4.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.3nC @ 10V Max Input Capacitance: 180pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 540 mOhm @ 2.6A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR110PBF - 1047013-IRFR110PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR110PBF
1047013-IRFR110PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR110PBF 1047013-IRFR110PBF
Manufacturer: Vishay Win Source Part Number: 1047013-IRFR110PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 4.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.3nC @ 10V Max Input Capacitance: 180pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 540 mOhm @ 2.6A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1047013-IRFR110PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 4.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.3nC @ 10V
Max Input Capacitance: 180pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 540 mOhm @ 2.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFR110PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR110PBF-ND
Single FETs, MOSFETs IRFR110PBF-ND
N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak

Buy Now Datasheet
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1780901
MOSFETs 1780901
MOSFET N-Channel 100V 4.3A DPAK

MOSFET N-Channel 100V 4.3A DPAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFR110PBF
MOSFET IRFR110PBF
MOSFET N-Chan 100V 4.3 Amp

MOSFET N-Chan 100V 4.3 Amp

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR110PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR110PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR110PBF
MOSFET N-CH 100V 4.3A DPAK

MOSFET N-CH 100V 4.3A DPAK

Supplier's Site
Mosfet, N-Ch, 100V, 4.3A, 150Deg C, 25W; Channel Type Vishay - 38K2600 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 4.3A, 150Deg C, 25W; Channel Type Vishay
38K2600
Mosfet, N-Ch, 100V, 4.3A, 150Deg C, 25W; Channel Type Vishay 38K2600
MOSFET, N-CH, 100V, 4.3A, 150DEG C, 25W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 100V, 4.3A, 150DEG C, 25W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1047013-IRFR110PBF IRFR110PBF-ND 1780901 IRFR110PBF IRFR110PBF 38K2600
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR110PBF Single FETs, MOSFETs MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 100V, 4.3A, 150Deg C, 25W; Channel Type Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 2500 to 25000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); DPAK (TO-252) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3
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