Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFR020PBF

Description
N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
Request a Quote Datasheet
Description
N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
Request a Quote Datasheet

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Single FETs, MOSFETs - IRFR020PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR020PBF-ND
Single FETs, MOSFETs IRFR020PBF-ND
N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak

N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR020PBF - 127827-IRFR020PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR020PBF
127827-IRFR020PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR020PBF 127827-IRFR020PBF
Manufacturer: Vishay Win Source Part Number: 127827-IRFR020PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 640pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 127827-IRFR020PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 640pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 8.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR020PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR020PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR020PBF
MOSFET N-CH 60V 14A DPAK

MOSFET N-CH 60V 14A DPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFR020PBF-ND 127827-IRFR020PBF IRFR020PBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR020PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 60 volts
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