Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFPS35N50LPBF

Description
N-Channel 500V 34A (Tc) 450W (Tc) Through Hole SUPER-247™ (TO-274AA)
Request a Quote Datasheet
Description
N-Channel 500V 34A (Tc) 450W (Tc) Through Hole SUPER-247™ (TO-274AA)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFPS35N50LPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFPS35N50LPBF-ND
Single FETs, MOSFETs IRFPS35N50LPBF-ND
N-Channel 500V 34A (Tc) 450W (Tc) Through Hole SUPER-247™ (TO-274AA)

N-Channel 500V 34A (Tc) 450W (Tc) Through Hole SUPER-247™ (TO-274AA)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPS35N50LPBF - 205383-IRFPS35N50LPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPS35N50LPBF
205383-IRFPS35N50LPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPS35N50LPBF 205383-IRFPS35N50LPBF
Manufacturer: Vishay Win Source Part Number: 205383-IRFPS35N50LPB F Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 450W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SUPER-247 (TO-274AA) Dimension: TO-274AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 34A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 230nC @ 10V Max Input Capacitance: 5580pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 145 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 205383-IRFPS35N50LPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 450W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SUPER-247 (TO-274AA)
Dimension: TO-274AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 34A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 230nC @ 10V
Max Input Capacitance: 5580pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 145 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFPS35N50LPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFPS35N50LPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFPS35N50LPBF
MOSFET N-CH 500V 34A SUPER247

MOSFET N-CH 500V 34A SUPER247

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFPS35N50LPBF-ND 205383-IRFPS35N50LPBF IRFPS35N50LPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPS35N50LPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-274AA SOT3; SUPER-247 (TO-274AA) TO-274AA
V(BR)DSS 500 volts
Unlock Full Specs
to access all available technical data

Similar Products

4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor - TGF3020-SM - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type QFN
View Details
3 suppliers
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF3315STRL - 108455-AUIRF3315STRL - Win Source Electronics
Specs
Polarity N-Channel; N-Channel
V(BR)DSS 150 volts
PD 3800 to 94000 milliwatts
View Details
4 suppliers
GaAs Fet Switches - KCB825 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details