Manufacturer: Vishay
Win Source Part Number: 017647-IRFPG30PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1000V (1kV)
Continuous Drain Current at 25°C: 3.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 980pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 Ohm @ 1.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
MOSFET N-CH 1000V 3.1A TO247-3
N-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole TO-247AC
N-Channel MOSFET, 1kV, 3.1A, 5R, TO-247 Product overview: IRFPG30PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1kV, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1kV, 3.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFPG30PBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 1000V 3.1A TO247-3
MOSFET, N-CH, 1KV, 3.1A, 150DEG C, 125W; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:3.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET, N-CHANNEL, 1000V, 3.1A (TC), 125W (TC), THROUGH HOLE, TO-247AC. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 017647-IRFPG30PBF | IRFPG30PBF | 2567301 | IRFPG30PBF-ND | 278-IRFPG30PBF | IRFPG30PBF | 01AC4882 | IRFPG30PBF | 16347549 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPG30PBF | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | N-Channel 1kV 3.1A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 1Kv, 3.1A, 150Deg C, 125W; Channel Type Vishay | MOSFET | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||||
| V(BR)DSS | 1000 volts | 1000 volts | |||||||
| PD | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
