Manufacturer: Vishay
Win Source Part Number: 017645-IRFPF40PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 4.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 120nC @ 10V
Max Input Capacitance: 1600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 Ohm @ 2.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
900V 4.7A N-Channel MOSFET TO-247 2.5R Product overview: IRFPF40PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V, 4.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 4.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFPF40PBF can be used for catalog matching and distributor lookup.
N-Channel 900V 4.7A (Tc) 150W (Tc) Through Hole TO-247AC
MOSFET N-CH 900V 4.7A TO247-3
N CHANNEL MOSFET, 900V, 4.7A TO-247; Transistor Polarity:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:4.7A; On Resistance Rds(on):2.5ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET, N-CH, 900V, 4.7A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:900V; On Resistance Rds(on):2.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 900V 4.7A TO247-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 017645-IRFPF40PBF | 278-IRFPF40PBF | IRFPF40PBF-ND | IRFPF40PBF | 63J6819 | 01AC4881 | IRFPF40PBF | IRFPF40PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPF40PBF | N-Channel 900V 4.7A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | N Channel Mosfet, 900V, 4.7A To-247; Transistor Polarity Vishay | Mosfet, N-Ch, 900V, 4.7A, To-247; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 900 volts | 900 volts | ||||||
| PD | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 | TO-3; TO-247 | TO-247; TO-247-3 |
