Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPF30PBF IRFPF30PBF

Description
Manufacturer: Vishay Win Source Part Number: 1047002-IRFPF30PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.7 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 1047002-IRFPF30PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.7 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPF30PBF - 1047002-IRFPF30PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPF30PBF
1047002-IRFPF30PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPF30PBF 1047002-IRFPF30PBF
Manufacturer: Vishay Win Source Part Number: 1047002-IRFPF30PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.7 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1047002-IRFPF30PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 3.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.7 Ohm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFPF30PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFPF30PBF-ND
Single FETs, MOSFETs IRFPF30PBF-ND
N-Channel 900V 3.6A (Tc) 125W (Tc) Through Hole TO-247AC

N-Channel 900V 3.6A (Tc) 125W (Tc) Through Hole TO-247AC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFPF30PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFPF30PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFPF30PBF
MOSFET N-CH 900V 3.6A TO247-3

MOSFET N-CH 900V 3.6A TO247-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 900V HEXFET MOSFET

MOSFET N-CH 900V HEXFET MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1047002-IRFPF30PBF IRFPF30PBF-ND IRFPF30PBF IRFPF30PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPF30PBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 900 volts
PD 125000 milliwatts
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