Manufacturer: Vishay
Win Source Part Number: 138054-IRFPE50PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Family Name: IRFPE50
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 7.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 200nC @ 10V
Max Input Capacitance: 3100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 4.7A, 10V
Alternative Parts (Cross-Reference): FQAF8N80; STW8NC80Z; FQAF8N80_NL;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
N-Channel 800V 7.8A (Tc) 190W (Tc) Through Hole TO-247AC
MOSFET N-Channel 800V 7.8A TO247AC
MOSFET N-Channel 800V 7.8A TO247AC
MOSFET N-Channel 800V 7.8A TO247AC
MOSFET N-CH 800V 7.8A TO247-3
POWER FIELD-EFFECT TRANSISTOR, 7.8A I(D), 800V, 1.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 800V 7.8A TO-247AC
MOSFET, N-CH, 800V, 7.8A, TO-247AC; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:7.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Radwell International | Utmel Electronic Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 138054-IRFPE50PBF | IRFPE50PBF-ND | 5411089 | 5411089P | IRFPE50PBF | 16347529 | 880-IRFPE50PBF | 92Y3548 | IRFPE50PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPE50PBF | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | Transistor | MOSFET N-CH 800V 7.8A TO-247AC | Mosfet, N-Ch, 800V, 7.8A, To-247Ac; Channel Type Vishay | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| V(BR)DSS | 800 volts | 800 volts | 800 volts | ||||||
| PD | 190000 milliwatts | 190000 milliwatts | 190000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | TO-247; To-247ac | TO-247; TO-247 | TO-247; TO-247-3 | TO-3; TO-247 |
