Vishay Precision Group Single FETs, MOSFETs IRFPE30PBF

Description
N-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole TO-247AC
Request a Quote Datasheet
Description
N-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole TO-247AC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 742-IRFPE30PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-IRFPE30PBF-ND
Single FETs, MOSFETs 742-IRFPE30PBF-ND
N-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole TO-247AC

N-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole TO-247AC

Buy Now Datasheet
Singapore
N-Channel 800V 4.1A MOSFET Transistor
278-IRFPE30PBF
N-Channel 800V 4.1A MOSFET Transistor 278-IRFPE30PBF
800V 4.1A N-Channel MOSFET TO-247 3R Product overview: IRFPE30PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V, 4.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 4.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFPE30PBF can be used for catalog matching and distributor lookup.

800V 4.1A N-Channel MOSFET TO-247 3R Product overview: IRFPE30PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V, 4.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 4.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFPE30PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPE30PBF - 124519-IRFPE30PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPE30PBF
124519-IRFPE30PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPE30PBF 124519-IRFPE30PBF
Manufacturer: Vishay Win Source Part Number: 124519-IRFPE30PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 4.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 124519-IRFPE30PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 4.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFPE30PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFPE30PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFPE30PBF
MOSFET N-CH 800V 4.1A TO247-3

MOSFET N-CH 800V 4.1A TO247-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 800V HEXFET MOSFET

MOSFET N-CH 800V HEXFET MOSFET

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Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 742-IRFPE30PBF-ND 278-IRFPE30PBF 124519-IRFPE30PBF IRFPE30PBF IRFPE30PBF
Product Name Single FETs, MOSFETs N-Channel 800V 4.1A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPE30PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247-3 TO-247; TO-247-3
PD 125000 milliwatts 125000 milliwatts
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