Vishay Precision Group Transistor IRFPC60LCPBF

Description
POWER FIELD-EFFECT TRANSISTOR, 16A I(D), 600V, 0.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC. FREE 2 YEAR RADWELL WARRANTY
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Description
POWER FIELD-EFFECT TRANSISTOR, 16A I(D), 600V, 0.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC. FREE 2 YEAR RADWELL WARRANTY
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Suppliers

Company
Product
Description
Supplier Links
Transistor - 16347509 - Radwell International
Willingboro, NJ, United States
Transistor
16347509
Transistor 16347509
POWER FIELD-EFFECT TRANSISTOR, 16A I(D), 600V, 0.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 16A I(D), 600V, 0.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPC60LCPBF - 017644-IRFPC60LCPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPC60LCPBF
017644-IRFPC60LCPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPC60LCPBF 017644-IRFPC60LCPBF
Manufacturer: Vishay Win Source Part Number: 017644-IRFPC60LCPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 280W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 3500pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 400 mOhm @ 9.6A, 10V Alternative Parts (Cross-Reference): APT15F60B; APT6038BLL; APT6038BFLL; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 017644-IRFPC60LCPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 280W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 120nC @ 10V
Max Input Capacitance: 3500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 400 mOhm @ 9.6A, 10V
Alternative Parts (Cross-Reference): APT15F60B; APT6038BLL; APT6038BFLL;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFPC60LCPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFPC60LCPBF
Single FETs, MOSFETs IRFPC60LCPBF
MOSFET N-CH 600V 16A TO247-3

MOSFET N-CH 600V 16A TO247-3

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFPC60LCPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFPC60LCPBF-ND
Single FETs, MOSFETs IRFPC60LCPBF-ND
N-Channel 600V 16A (Tc) 280W (Tc) Through Hole TO-247AC

N-Channel 600V 16A (Tc) 280W (Tc) Through Hole TO-247AC

Buy Now Datasheet
N Channel Mosfet, 600V, 16A, To-247; Channel Type Vishay - 63J6813 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 600V, 16A, To-247; Channel Type Vishay
63J6813
N Channel Mosfet, 600V, 16A, To-247; Channel Type Vishay 63J6813
N CHANNEL MOSFET, 600V, 16A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 600V, 16A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 600V HEXFET MOSFET

MOSFET N-CH 600V HEXFET MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFPC60LCPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFPC60LCPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFPC60LCPBF
MOSFET N-CH 600V 16A TO247-3

MOSFET N-CH 600V 16A TO247-3

Supplier's Site

Technical Specifications

  Radwell International Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 16347509 017644-IRFPC60LCPBF IRFPC60LCPBF IRFPC60LCPBF-ND 63J6813 IRFPC60LCPBF IRFPC60LCPBF
Product Name Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPC60LCPBF Single FETs, MOSFETs Single FETs, MOSFETs N Channel Mosfet, 600V, 16A, To-247; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 280000 milliwatts 280000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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