600V 11A N-Channel MOSFET TO-247AC Product overview: IRFPC50APBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IRFPC50APBF can be used for catalog matching and distributor lookup.
N-Channel 600V 11A (Tc) 180W (Tc) Through Hole TO-247AC
MOSFET N-CH 600V 11A TO247-3
Manufacturer: Vishay
Win Source Part Number: 017643-IRFPC50APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 180W (Tc)
Family Name: IRFPC50
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 2100pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 580 mOhm @ 6A, 10V
Alternative Parts (Cross-Reference): STW12NA60; STW10NB60; STW12NB60; STW10N95K5;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
MOSFET N-CH 600V 11A TO247-3
N CHANNEL MOSFET, 600V, 11A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-IRFPC50APBF | IRFPC50APBF-ND | IRFPC50APBF | 5429844 | 017643-IRFPC50APBF | IRFPC50APBF | IRFPC50APBF | 63J6811 |
| Product Name | N-Channel 600V 11A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPC50APBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 600V, 11A, To-247; Channel Type Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 180000 milliwatts | 180000 milliwatts | 180000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; To-247ac | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
