The Vishay N-Channel MOSFET transistor, part number 38K2574, features a maximum drain-source voltage (V_DS) of 400 V and a continuous drain current (I_D) rating of 11 A at a case temperature of 25 ¬8C. It has a low on-resistance (R_DS(on)) of 0.55 Oc when the gate-source voltage (V_GS) is set to 10 V. The device is designed for fast switching applications and is housed in a TO-247AC package, which is suitable for commercial and industrial applications requiring higher power levels. This MOSFET is RoHS compliant and offers a maximum power dissipation of 150 W at 25 ¬8C. It supports a pulsed drain current of up to 44 A and has a single pulse avalanche energy rating of 480 mJ. The operating junction temperature range is from -55 ¬8C to +150 ¬8C, making it versatile for various environmental conditions. The device also features a gate-source threshold voltage (V_GS(th)) between 2.0 V and 4.0 V, and a total gate charge (Q_g) of 62 nC, indicating efficient drive requirements. Engineers seeking a robust and efficient MOSFET for high-voltage applications may find this product suitable for their designs.
MOSFET N-CH 400V 11A TO247-3
N-Channel 400V 11A (Tc) 150W (Tc) Through Hole TO-247AC
N-Channel MOSFET, 400V, 11A, 550mR, TO-247AC Product overview: IRFP340PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 400V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFP340PBF can be used for catalog matching and distributor lookup.
N channel ;VBRDSS 400 V; RDSon 550 mOh
N channel ;VBRDSS 400 V; RDSon 550 mOh
Manufacturer: Vishay
Win Source Part Number: 017630-IRFP340PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 62nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 550 mOhm @ 6.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
MOSFET Transistor, N Channel, 11 A, 400 V, 550 mohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 400V 11A TO247-3
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFP340PBF | IRFP340PBF-ND | 278-IRFP340PBF | 1808336 | 017630-IRFP340PBF | 38K2574 | IRFP340PBF | IRFP340PBF | 17930-IRFP340PBF |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 400V 11A MOSFET Transistor | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP340PBF | Mosfet Transistor, N Channel, 11 A, 400 V, 550 Mohm, 10 V, 4 V Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | TO-247-3 MOSFETs ROHS |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 400 volts | 400 volts | |||||||
| IDSS | 11000 milliamps |
