Vishay Precision Group Single FETs, MOSFETs IRFP340PBF

Description
N-Channel 400V 11A (Tc) 150W (Tc) Through Hole TO-247AC
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Description
N-Channel 400V 11A (Tc) 150W (Tc) Through Hole TO-247AC
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Datasheet
Datasheet Summary
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The Vishay N-Channel MOSFET transistor, part number 38K2574, features a maximum drain-source voltage (V_DS) of 400 V and a continuous drain current (I_D) rating of 11 A at a case temperature of 25 ¬8C. It has a low on-resistance (R_DS(on)) of 0.55 Oc when the gate-source voltage (V_GS) is set to 10 V. The device is designed for fast switching applications and is housed in a TO-247AC package, which is suitable for commercial and industrial applications requiring higher power levels. This MOSFET is RoHS compliant and offers a maximum power dissipation of 150 W at 25 ¬8C. It supports a pulsed drain current of up to 44 A and has a single pulse avalanche energy rating of 480 mJ. The operating junction temperature range is from -55 ¬8C to +150 ¬8C, making it versatile for various environmental conditions. The device also features a gate-source threshold voltage (V_GS(th)) between 2.0 V and 4.0 V, and a total gate charge (Q_g) of 62 nC, indicating efficient drive requirements. Engineers seeking a robust and efficient MOSFET for high-voltage applications may find this product suitable for their designs.

Datasheet Summary
Powered by GS/AI

The Vishay N-Channel MOSFET transistor, part number 38K2574, features a maximum drain-source voltage (V_DS) of 400 V and a continuous drain current (I_D) rating of 11 A at a case temperature of 25 ¬8C. It has a low on-resistance (R_DS(on)) of 0.55 Oc when the gate-source voltage (V_GS) is set to 10 V. The device is designed for fast switching applications and is housed in a TO-247AC package, which is suitable for commercial and industrial applications requiring higher power levels. This MOSFET is RoHS compliant and offers a maximum power dissipation of 150 W at 25 ¬8C. It supports a pulsed drain current of up to 44 A and has a single pulse avalanche energy rating of 480 mJ. The operating junction temperature range is from -55 ¬8C to +150 ¬8C, making it versatile for various environmental conditions. The device also features a gate-source threshold voltage (V_GS(th)) between 2.0 V and 4.0 V, and a total gate charge (Q_g) of 62 nC, indicating efficient drive requirements. Engineers seeking a robust and efficient MOSFET for high-voltage applications may find this product suitable for their designs.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFP340PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFP340PBF-ND
Single FETs, MOSFETs IRFP340PBF-ND
N-Channel 400V 11A (Tc) 150W (Tc) Through Hole TO-247AC

N-Channel 400V 11A (Tc) 150W (Tc) Through Hole TO-247AC

Buy Now Datasheet
Singapore
N-Channel 400V 11A MOSFET Transistor
278-IRFP340PBF
N-Channel 400V 11A MOSFET Transistor 278-IRFP340PBF
N-Channel MOSFET, 400V, 11A, 550mR, TO-247AC Product overview: IRFP340PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 400V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFP340PBF can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 400V, 11A, 550mR, TO-247AC Product overview: IRFP340PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 400V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFP340PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP340PBF - 017630-IRFP340PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP340PBF
017630-IRFP340PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP340PBF 017630-IRFP340PBF
Manufacturer: Vishay Win Source Part Number: 017630-IRFP340PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 62nC @ 10V Max Input Capacitance: 1400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 550 mOhm @ 6.6A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 017630-IRFP340PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 62nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 550 mOhm @ 6.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFP340PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFP340PBF
Single FETs, MOSFETs IRFP340PBF
MOSFET N-CH 400V 11A TO247-3

MOSFET N-CH 400V 11A TO247-3

Supplier's Site Datasheet
MOSFETs - 1808336 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808336
MOSFETs 1808336
N channel ;VBRDSS 400 V; RDSon 550 mOh

N channel ;VBRDSS 400 V; RDSon 550 mOh

Supplier's Site
MOSFETs - 1808662 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808662
MOSFETs 1808662
N channel ;VBRDSS 400 V; RDSon 550 mOh

N channel ;VBRDSS 400 V; RDSon 550 mOh

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 400V HEXFET MOSFET

MOSFET N-CH 400V HEXFET MOSFET

Buy Now Datasheet
TO-247-3 MOSFETs ROHS - 17930-IRFP340PBF - Utmel Electronic Limited
Hong Kong, China
TO-247-3 MOSFETs ROHS
17930-IRFP340PBF
TO-247-3 MOSFETs ROHS 17930-IRFP340PBF
TO-247-3 MOSFETs ROHS

TO-247-3 MOSFETs ROHS

Supplier's Site
Mosfet Transistor, N Channel, 11 A, 400 V, 550 Mohm, 10 V, 4 V Rohs Compliant Vishay - 38K2574 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 11 A, 400 V, 550 Mohm, 10 V, 4 V Rohs Compliant Vishay
38K2574
Mosfet Transistor, N Channel, 11 A, 400 V, 550 Mohm, 10 V, 4 V Rohs Compliant Vishay 38K2574
MOSFET Transistor, N Channel, 11 A, 400 V, 550 mohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 11 A, 400 V, 550 mohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFP340PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFP340PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFP340PBF
MOSFET N-CH 400V 11A TO247-3

MOSFET N-CH 400V 11A TO247-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) RS Components, Ltd. VAST STOCK CO., LIMITED Utmel Electronic Limited Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFP340PBF-ND 278-IRFP340PBF 017630-IRFP340PBF IRFP340PBF 1808336 IRFP340PBF 17930-IRFP340PBF 38K2574 IRFP340PBF
Product Name Single FETs, MOSFETs N-Channel 400V 11A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP340PBF Single FETs, MOSFETs MOSFETs MOSFET TO-247-3 MOSFETs ROHS Mosfet Transistor, N Channel, 11 A, 400 V, 550 Mohm, 10 V, 4 V Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247-3 TO-247; TO-247-3 TO-3 TO-247; TO-247-3
PD 150000 milliwatts 150000 milliwatts 150000 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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