Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP31N50LPBF IRFP31N50LPBF

Description
Manufacturer: Vishay Win Source Part Number: 205376-IRFP31N50LPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 460W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 31A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 210nC @ 10V Max Input Capacitance: 5000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 180 mOhm @ 19A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 205376-IRFP31N50LPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 460W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 31A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 210nC @ 10V Max Input Capacitance: 5000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 180 mOhm @ 19A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP31N50LPBF - 205376-IRFP31N50LPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP31N50LPBF
205376-IRFP31N50LPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP31N50LPBF 205376-IRFP31N50LPBF
Manufacturer: Vishay Win Source Part Number: 205376-IRFP31N50LPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 460W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 31A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 210nC @ 10V Max Input Capacitance: 5000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 180 mOhm @ 19A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 205376-IRFP31N50LPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 460W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 31A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 210nC @ 10V
Max Input Capacitance: 5000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 180 mOhm @ 19A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFP31N50LPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFP31N50LPBF
Single FETs, MOSFETs IRFP31N50LPBF
MOSFET N-CH 500V 31A TO247-3

MOSFET N-CH 500V 31A TO247-3

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFP31N50LPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFP31N50LPBF-ND
Single FETs, MOSFETs IRFP31N50LPBF-ND
N-Channel 500V 31A (Tc) 460W (Tc) Through Hole TO-247AC

N-Channel 500V 31A (Tc) 460W (Tc) Through Hole TO-247AC

Buy Now Datasheet
N Channel Mosfet, 500V, 31A, To-247; Transistor Polarity Vishay - 63J6870 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 500V, 31A, To-247; Transistor Polarity Vishay
63J6870
N Channel Mosfet, 500V, 31A, To-247; Transistor Polarity Vishay 63J6870
N CHANNEL MOSFET, 500V, 31A, TO-247; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:31A; On Resistance Rds(on):0.18ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 500V, 31A, TO-247; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:31A; On Resistance Rds(on):0.18ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, N Channel, 31 A, 500 V, 180 Mohm, 10 V, 5 V Rohs Compliant Vishay - 38K2572 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 31 A, 500 V, 180 Mohm, 10 V, 5 V Rohs Compliant Vishay
38K2572
Mosfet Transistor, N Channel, 31 A, 500 V, 180 Mohm, 10 V, 5 V Rohs Compliant Vishay 38K2572
MOSFET Transistor, N Channel, 31 A, 500 V, 180 mohm, 10 V, 5 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 31 A, 500 V, 180 mohm, 10 V, 5 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFP31N50LPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFP31N50LPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFP31N50LPBF
MOSFET N-CH 500V 31A TO247-3

MOSFET N-CH 500V 31A TO247-3

Supplier's Site
Transistor - 16347393 - Radwell International
Willingboro, NJ, United States
Transistor
16347393
Transistor 16347393
N CHANNEL MOSFET, 500V, 31A, TO-247; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:31A; DRAIN SOURCE VOLTAGE VDS:500V; ON RESISTANCE RDS(ON):0.18OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:5V; MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 500V, 31A, TO-247; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:31A; DRAIN SOURCE VOLTAGE VDS:500V; ON RESISTANCE RDS(ON):0.18OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:5V; MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 500V HEXFET MOSFET

MOSFET N-CH 500V HEXFET MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Radwell International VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 205376-IRFP31N50LPBF IRFP31N50LPBF IRFP31N50LPBF-ND 63J6870 38K2572 IRFP31N50LPBF 16347393 IRFP31N50LPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP31N50LPBF Single FETs, MOSFETs Single FETs, MOSFETs N Channel Mosfet, 500V, 31A, To-247; Transistor Polarity Vishay Mosfet Transistor, N Channel, 31 A, 500 V, 180 Mohm, 10 V, 5 V Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
PD 460000 milliwatts 460000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; SOT3; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247 TO-3 TO-247; TO-247-3
Unlock Full Specs
to access all available technical data