Vishay Intertechnology, Inc. FETs - Single - IRFP26N60L IRFP26N60L

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187778-IRFP26N60L Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 470W Alternative Parts (Cross-Reference): IXFH26N60P; APT23F60B; IRFP26N60L; SiHFP26N60L; Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 26A Rds On (Maximum) at Id, Vgs: 250mOhm at 16A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 180nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 5020pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187778-IRFP26N60L Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 470W Alternative Parts (Cross-Reference): IXFH26N60P; APT23F60B; IRFP26N60L; SiHFP26N60L; Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 26A Rds On (Maximum) at Id, Vgs: 250mOhm at 16A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 180nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 5020pF at 25V
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Suppliers

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Product
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Supplier Links
FETs - Single - IRFP26N60L - 1187778-IRFP26N60L - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFP26N60L
1187778-IRFP26N60L
FETs - Single - IRFP26N60L 1187778-IRFP26N60L
Manufacturer: Vishay Siliconix Win Source Part Number: 1187778-IRFP26N60L Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 470W Alternative Parts (Cross-Reference): IXFH26N60P; APT23F60B; IRFP26N60L; SiHFP26N60L; Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 26A Rds On (Maximum) at Id, Vgs: 250mOhm at 16A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 180nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 5020pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187778-IRFP26N60L
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 470W
Alternative Parts (Cross-Reference): IXFH26N60P; APT23F60B; IRFP26N60L; SiHFP26N60L;
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 26A
Rds On (Maximum) at Id, Vgs: 250mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 180nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 5020pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFP26N60L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFP26N60L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFP26N60L
MOSFET N-CH 600V 26A TO247-3

MOSFET N-CH 600V 26A TO247-3

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1187778-IRFP26N60L IRFP26N60L
Product Name FETs - Single - IRFP26N60L Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts
PD 470000 milliwatts
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