Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP260PBF IRFP260PBF

Description
Manufacturer: Vishay Win Source Part Number: 1046982-IRFP260PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 280W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 46A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 230nC @ 10V Max Input Capacitance: 5200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 55 mOhm @ 28A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance Application Field: Used in Industrial
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Description
Manufacturer: Vishay Win Source Part Number: 1046982-IRFP260PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 280W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 46A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 230nC @ 10V Max Input Capacitance: 5200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 55 mOhm @ 28A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance Application Field: Used in Industrial
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP260PBF - 1046982-IRFP260PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP260PBF
1046982-IRFP260PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP260PBF 1046982-IRFP260PBF
Manufacturer: Vishay Win Source Part Number: 1046982-IRFP260PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 280W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 46A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 230nC @ 10V Max Input Capacitance: 5200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 55 mOhm @ 28A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance Application Field: Used in Industrial

Manufacturer: Vishay
Win Source Part Number: 1046982-IRFP260PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 280W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 46A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 230nC @ 10V
Max Input Capacitance: 5200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 55 mOhm @ 28A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial

Buy Now Datasheet
Single FETs, MOSFETs - IRFP260PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFP260PBF-ND
Single FETs, MOSFETs IRFP260PBF-ND
N-Channel 200V 46A (Tc) 280W (Tc) Through Hole TO-247AC

N-Channel 200V 46A (Tc) 280W (Tc) Through Hole TO-247AC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFP260PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFP260PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFP260PBF
MOSFET N-CH 200V 46A TO247-3

MOSFET N-CH 200V 46A TO247-3

Supplier's Site
Mosfet, N-Ch, 200V, 46A, 150Deg C, 280W; Channel Type Vishay - 01AC4883 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 46A, 150Deg C, 280W; Channel Type Vishay
01AC4883
Mosfet, N-Ch, 200V, 46A, 150Deg C, 280W; Channel Type Vishay 01AC4883
MOSFET, N-CH, 200V, 46A, 150DEG C, 280W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:46A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 200V, 46A, 150DEG C, 280W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:46A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 200V HEXFET MOSFET

MOSFET N-CH 200V HEXFET MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1046982-IRFP260PBF IRFP260PBF-ND IRFP260PBF 01AC4883 IRFP260PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP260PBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 200V, 46A, 150Deg C, 280W; Channel Type Vishay MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts
PD 280000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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