Manufacturer: Vishay
Win Source Part Number: 1046982-IRFP260PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 280W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 46A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 230nC @ 10V
Max Input Capacitance: 5200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 55 mOhm @ 28A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial
N-Channel MOSFET, 200V, 46A, 55mR Rds On, TO-247 Product overview: IRFP260PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 46A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 46A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFP260PBF can be used for catalog matching and distributor lookup.
N-Channel 200V 46A (Tc) 280W (Tc) Through Hole TO-247AC
MOSFET, N-CH, 200V, 46A, 150DEG C, 280W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:46A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 200V 46A TO247-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1046982-IRFP260PBF | 278-IRFP260PBF | IRFP260PBF-ND | IRFP260PBF | 01AC4883 | IRFP260PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP260PBF | N-Channel 200V 46A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 200V, 46A, 150Deg C, 280W; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 200 volts | |||||
| PD | 280000 milliwatts | 280000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
