Manufacturer: Vishay
Win Source Part Number: 090797-IRFP240
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): IRFP240PBF; IRFS240B_FP001; IRFS240B;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
MOSFET N-CH 200V 20A TO247-3 Product overview: IRFP240 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFP240 can be used for catalog matching and distributor lookup.
MOSFET N-CH 200V 20A TO247-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 090797-IRFP240 | 278-IRFP240 | IRFP240 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP240 | 200V 20A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | ||
| V(BR)DSS | 200 volts | ||
| PD | 150000 milliwatts | 150000 milliwatts |