Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP22N50A IRFP22N50A

Description
Manufacturer: Vishay Win Source Part Number: 088549-IRFP22N50A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 277W (Tc) Family Name: IRFP22N50A Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 22A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 3450pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 230 mOhm @ 13A, 10V Alternative Parts (Cross-Reference): SiHFP22N50A-E3; SiHFP22N50A; 2SK3117; TSM23N50CN C0; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China, Israel, Mexico Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 088549-IRFP22N50A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 277W (Tc) Family Name: IRFP22N50A Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 22A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 3450pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 230 mOhm @ 13A, 10V Alternative Parts (Cross-Reference): SiHFP22N50A-E3; SiHFP22N50A; 2SK3117; TSM23N50CN C0; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China, Israel, Mexico Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP22N50A - 088549-IRFP22N50A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP22N50A
088549-IRFP22N50A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP22N50A 088549-IRFP22N50A
Manufacturer: Vishay Win Source Part Number: 088549-IRFP22N50A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 277W (Tc) Family Name: IRFP22N50A Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 22A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 3450pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 230 mOhm @ 13A, 10V Alternative Parts (Cross-Reference): SiHFP22N50A-E3; SiHFP22N50A; 2SK3117; TSM23N50CN C0; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China, Israel, Mexico Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 088549-IRFP22N50A
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 277W (Tc)
Family Name: IRFP22N50A
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 22A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 120nC @ 10V
Max Input Capacitance: 3450pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 230 mOhm @ 13A, 10V
Alternative Parts (Cross-Reference): SiHFP22N50A-E3; SiHFP22N50A; 2SK3117; TSM23N50CN C0;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China, Israel, Mexico
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Singapore
500V 22A MOSFET Transistor
278-IRFP22N50A
500V 22A MOSFET Transistor 278-IRFP22N50A
MOSFET N-CH 500V 22A TO247-3 Product overview: IRFP22N50A from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 22A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFP22N50A can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 22A TO247-3 Product overview: IRFP22N50A from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 22A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFP22N50A can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFP22N50A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFP22N50A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFP22N50A
MOSFET N-CH 500V 22A TO247-3

MOSFET N-CH 500V 22A TO247-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 088549-IRFP22N50A 278-IRFP22N50A IRFP22N50A
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP22N50A 500V 22A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 500 volts
PD 277000 milliwatts 277000 milliwatts
Unlock Full Specs
to access all available technical data