Vishay Intertechnology, Inc. FETs - Single - IRFP21N60L IRFP21N60L

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187766-IRFP21N60L Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 330W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 21A Rds On (Maximum) at Id, Vgs: 320mOhm at 13A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 150nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 4000pF at 25V
Request a Quote
Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187766-IRFP21N60L Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 330W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 21A Rds On (Maximum) at Id, Vgs: 320mOhm at 13A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 150nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 4000pF at 25V
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFP21N60L - 1187766-IRFP21N60L - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFP21N60L
1187766-IRFP21N60L
FETs - Single - IRFP21N60L 1187766-IRFP21N60L
Manufacturer: Vishay Siliconix Win Source Part Number: 1187766-IRFP21N60L Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 330W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 21A Rds On (Maximum) at Id, Vgs: 320mOhm at 13A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 150nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 4000pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187766-IRFP21N60L
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 330W
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 21A
Rds On (Maximum) at Id, Vgs: 320mOhm at 13A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 150nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 4000pF at 25V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFP21N60L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFP21N60L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFP21N60L
MOSFET N-CH 600V 21A TO247-3

MOSFET N-CH 600V 21A TO247-3

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1187766-IRFP21N60L IRFP21N60L
Product Name FETs - Single - IRFP21N60L Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts
PD 330000 milliwatts
Unlock Full Specs
to access all available technical data