Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP140PBF IRFP140PBF

Description
Manufacturer: Vishay Win Source Part Number: 1046980-IRFP140PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 180W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 31A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 72nC @ 10V Max Input Capacitance: 1700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 77 mOhm @ 19A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP140PBF - 1046980-IRFP140PBF - Win Source Electronics
    Win Source Electronics
  • Transistor - 16347313 - Radwell International
    Radwell International
  • Single FETs, MOSFETs - IRFP140PBF-ND - DigiKey
    DigiKey
  • N Channel Mosfet, 100V, 31A, To-247; Channel Type Vishay - 63J6845 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N-Ch, 100V, 31A, To-247 Rohs Compliant Vishay - 56AJ9886 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFP140PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.077Ohm;ID 31A;TO-247AC;PD 180W;VGS +/-20V - 70078924 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1046980-IRFP140PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 180W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 31A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 72nC @ 10V Max Input Capacitance: 1700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 77 mOhm @ 19A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP140PBF - 1046980-IRFP140PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP140PBF
1046980-IRFP140PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP140PBF 1046980-IRFP140PBF
Manufacturer: Vishay Win Source Part Number: 1046980-IRFP140PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 180W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 31A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 72nC @ 10V Max Input Capacitance: 1700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 77 mOhm @ 19A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1046980-IRFP140PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 180W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 31A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 72nC @ 10V
Max Input Capacitance: 1700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 77 mOhm @ 19A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Transistor - 16347313 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16347313
Transistor 16347313
N CHANNEL MOSFET, 100V, 31A, TO-247, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:100V, CONTINUOUS DRAIN CURRENT ID:31A, ON RESISTANCE RDS(ON):0.077OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, MSL:-ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 100V, 31A, TO-247, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:100V, CONTINUOUS DRAIN CURRENT ID:31A, ON RESISTANCE RDS(ON):0.077OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, MSL:-ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - IRFP140PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFP140PBF-ND
Single FETs, MOSFETs IRFP140PBF-ND
N-Channel 100V 31A (Tc) 180W (Tc) Through Hole TO-247AC

N-Channel 100V 31A (Tc) 180W (Tc) Through Hole TO-247AC

Buy Now Datasheet
N Channel Mosfet, 100V, 31A, To-247; Channel Type Vishay - 63J6845 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 31A, To-247; Channel Type Vishay
63J6845
N Channel Mosfet, 100V, 31A, To-247; Channel Type Vishay 63J6845
N CHANNEL MOSFET, 100V, 31A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:31A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 31A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:31A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Mosfet, N-Ch, 100V, 31A, To-247 Rohs Compliant Vishay - 56AJ9886 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 31A, To-247 Rohs Compliant Vishay
56AJ9886
Mosfet, N-Ch, 100V, 31A, To-247 Rohs Compliant Vishay 56AJ9886
MOSFET, N-CH, 100V, 31A, TO-247 ROHS COMPLIANT: YES

MOSFET, N-CH, 100V, 31A, TO-247 ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFP140PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFP140PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFP140PBF
MOSFET N-CH 100V 31A TO247-3

MOSFET N-CH 100V 31A TO247-3

Supplier's Site
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.077Ohm;ID 31A;TO-247AC;PD 180W;VGS +/-20V - 70078924 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.077Ohm;ID 31A;TO-247AC;PD 180W;VGS +/-20V
70078924
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.077Ohm;ID 31A;TO-247AC;PD 180W;VGS +/-20V 70078924
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industria l applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. Features: Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-Free Available

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
Features:

  • Dynamic dV/dt Rating
  • Repetitive Avalanche Rated
  • Isolated Central Mounting Hole
  • 175°C Operating Temperature
  • Fast Switching
  • Ease of Paralleling
  • Simple Drive Requirements
  • Lead (Pb)-Free Available
Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFP140PBF
MOSFET IRFP140PBF
MOSFET N-CH 100V HEXFET MOSFET

MOSFET N-CH 100V HEXFET MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Radwell International DigiKey Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc. VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1046980-IRFP140PBF 16347313 IRFP140PBF-ND 63J6845 56AJ9886 IRFP140PBF 70078924 IRFP140PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP140PBF Transistor Single FETs, MOSFETs N Channel Mosfet, 100V, 31A, To-247; Channel Type Vishay Mosfet, N-Ch, 100V, 31A, To-247 Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.077Ohm;ID 31A;TO-247AC;PD 180W;VGS +/-20V MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 180000 milliwatts 180000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type TO-247; SOT3; TO-247-3 TO-247; TO-247-3 TO-3; TO-247 TO-3; TO-247 TO-247; TO-247-3 TO-247
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