MOSFET N-CH 60V 70A TO247-3
MOSFET N-Channel 100V 31A TO-247AC
MOSFET N-Channel 100V 31A TO-247AC
MOSFET N-Channel 100V 31A TO-247AC
N-Channel 60V 70A (Tc) 300W (Tc) Through Hole TO-247AC
Manufacturer: Vishay
Win Source Part Number: 1046978-IRFP064PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 70A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 190nC @ 10V
Max Input Capacitance: 7400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 78A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
N CHANNEL MOSFET, 60V, 70A, TO-247; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:70A; On Resistance Rds(on):0.009ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes
MOSFET, N-CH, 60V, 70A, TO-247 ROHS COMPLIANT: YES
60V 70A 300W 9mΩ@10V,7.8A 4V@250uA N Channel TO-247AC-3 MOSFETs ROHS
MOSFET N-CH 60V 70A TO247-3
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.009Ohm;ID 70A;TO-247AC;PD 300W;VGS +/-20V
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFP064PBF | 8152742P | 8152742 | IRFP064PBF-ND | 1046978-IRFP064PBF | 63J6842 | 56AJ9885 | IRFP064PBF | IRFP064PBF | IRFP064PBF | 70078923 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP064PBF | N Channel Mosfet, 60V, 70A, To-247; Transistor Polarity Vishay | Mosfet, N-Ch, 60V, 70A, To-247 Rohs Compliant Vishay | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.009Ohm;ID 70A;TO-247AC;PD 300W;VGS +/-20V |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | |||||||
| IDSS | 70000 milliamps | 70000 milliamps | |||||||||
| PD | 300000 milliwatts | 300000 milliwatts | 300000 milliwatts | 300000 milliwatts |
