MOSFET P-Channel 100V 1.1A SOT-223
MOSFET P-Channel 100V 1.1A SOT-223
MOSFET P-Channel 100V 1.1A SOT-223
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 100V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-261AA TO-223. FREE 2 YEAR RADWELL WARRANTY
P-Channel 100V 1.1A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
P-Channel 100V 1.1A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
P-Channel 100V 1.1A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
Manufacturer: Vishay
Win Source Part Number: 016299-IRFL9110TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.7nC @ 10V
Max Input Capacitance: 200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 660mA, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 100V 1.1A SOT223
MOSFET P-CH 100V 1.1A SOT223
P CHANNEL MOSFET, -100V, 1.1A, SOT-223; Transistor Polarity:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.1A; On Resistance Rds(on):1.2ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET, P-CH, 100V, 1.1A, SOT-223 ROHS COMPLIANT: YES
| RS Components, Ltd. | RS Components, Ltd. | Radwell International | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 8152730P | 8152730 | 16347293 | IRFL9110PBFDKR-ND | 016299-IRFL9110TRPBF | IRFL9110TRPBF | IRFL9110TRPBF | IRFL9110TRPBF | 19K8171 | 56AJ9882 |
| Product Name | MOSFETs | MOSFETs | Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL9110TRPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | P Channel Mosfet, -100V, 1.1A, Sot-223; Transistor Polarity Vishay | Mosfet, P-Ch, 100V, 1.1A, Sot-223 Rohs Compliant Vishay |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||||
| Package Type | SOT223; SOT-223 | SOT223; Sot-223 | SOT223; TO-261-4, TO-261AA | SOT3; SOT-223 | SOT223; TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-3; SOT223 | TO-3; SOT223 | ||
| MOSFET Operating Mode | Enhancement | |||||||||
| Number of units in IC | 1 | |||||||||
| V(BR)DSS | 100 volts | 100 volts |
