Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL9110PBF IRFL9110PBF

Description
Manufacturer: Vishay Win Source Part Number: 112266-IRFL9110PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.7nC @ 10V Max Input Capacitance: 200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 660mA, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL9110PBF - 112266-IRFL9110PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFL9110PBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFL9110PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET P-CH 100V 1.1A SOT223 - 880-IRFL9110PBF - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 112266-IRFL9110PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.7nC @ 10V Max Input Capacitance: 200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 660mA, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL9110PBF - 112266-IRFL9110PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL9110PBF
112266-IRFL9110PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL9110PBF 112266-IRFL9110PBF
Manufacturer: Vishay Win Source Part Number: 112266-IRFL9110PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.7nC @ 10V Max Input Capacitance: 200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 660mA, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 112266-IRFL9110PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.7nC @ 10V
Max Input Capacitance: 200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 660mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFL9110PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFL9110PBF-ND
Single FETs, MOSFETs IRFL9110PBF-ND
P-Channel 100V 1.1A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

P-Channel 100V 1.1A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFL9110PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFL9110PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFL9110PBF
MOSFET P-CH 100V 1.1A SOT223

MOSFET P-CH 100V 1.1A SOT223

Supplier's Site
MOSFET P-CH 100V 1.1A SOT223 - 880-IRFL9110PBF - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 100V 1.1A SOT223
880-IRFL9110PBF
MOSFET P-CH 100V 1.1A SOT223 880-IRFL9110PBF
MOSFET P-CH 100V 1.1A SOT223

MOSFET P-CH 100V 1.1A SOT223

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 112266-IRFL9110PBF IRFL9110PBF-ND IRFL9110PBF 880-IRFL9110PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL9110PBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET P-CH 100V 1.1A SOT223
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 100 volts -100 volts
PD 2000 to 3100 milliwatts 2000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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