P-channel MOSFET in SOT-223 package designed for surface-mount applications, with a drain-source voltage rating of -60 V, continuous drain current of -1.8 A at 25 °C, and on-state resistance of 0.50 Ω at -10 V gate-source voltage. The device supports repetitive avalanche operation, features fast switching, and has a maximum power dissipation of 3.1 W at 25 °C. Thermal resistance junction-to-ambient is 60 °C/W when mounted on a 1" square PCB. The part is lead-free and halogen-free, and meets RoHS compliance.
MOSFET, P CHANNEL, -60V, -1.8A, SOT-223-4, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:3.1W RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 26AC0514 |
| Product Name | Mosfet, P Channel, -60V, -1.8A, Sot-223-4, Full Reel; Channel Type Vishay |
| Polarity | P-Channel |