Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFL9014PBF

Description
P-Channel 60V 1.8A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
Request a Quote Datasheet
Description
P-Channel 60V 1.8A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFL9014PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFL9014PBF-ND
Single FETs, MOSFETs IRFL9014PBF-ND
P-Channel 60V 1.8A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

P-Channel 60V 1.8A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL9014PBF - 1046971-IRFL9014PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL9014PBF
1046971-IRFL9014PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL9014PBF 1046971-IRFL9014PBF
Manufacturer: Vishay Win Source Part Number: 1046971-IRFL9014PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 270pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 500 mOhm @ 1.1A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management

Manufacturer: Vishay
Win Source Part Number: 1046971-IRFL9014PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 270pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 500 mOhm @ 1.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFL9014PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFL9014PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFL9014PBF
MOSFET P-CH 60V 1.8A SOT223

MOSFET P-CH 60V 1.8A SOT223

Supplier's Site
MOSFET P-CH 60V 1.8A SOT223 - 880-IRFL9014PBF - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 60V 1.8A SOT223
880-IRFL9014PBF
MOSFET P-CH 60V 1.8A SOT223 880-IRFL9014PBF
MOSFET P-CH 60V 1.8A SOT223

MOSFET P-CH 60V 1.8A SOT223

Supplier's Site
MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.5Ohm;ID -1.8A;SOT-223;PD 3.1W;VGS +/-20V - 70078920 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.5Ohm;ID -1.8A;SOT-223;PD 3.1W;VGS +/-20V
70078920
MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.5Ohm;ID -1.8A;SOT-223;PD 3.1W;VGS +/-20V 70078920
MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.5Ohm;ID -1.8A;SOT-223;PD 3.1W;VGS +/-20V

MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.5Ohm;ID -1.8A;SOT-223;PD 3.1W;VGS +/-20V

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited Allied Electronics, Inc.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFL9014PBF-ND 1046971-IRFL9014PBF IRFL9014PBF 880-IRFL9014PBF 70078920
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL9014PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET P-CH 60V 1.8A SOT223 MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.5Ohm;ID -1.8A;SOT-223;PD 3.1W;VGS +/-20V
Polarity P-Channel P-Channel; P-Channel P-Channel
Package Type SOT223; TO-261-4, TO-261AA SOT3; SOT-223 TO-261-4, TO-261AA SOT223
V(BR)DSS 60 volts -60 volts -60 volts
PD 2000 to 3100 milliwatts 2000 milliwatts 3100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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