P-Channel 60V 1.8A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
MOSFET P-CH 60V 1.8A SOT223 Product overview: IRFL9014PBF from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 1.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFL9014PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1046971-IRFL9014PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 270pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 500 mOhm @ 1.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management
MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.5Ohm;ID -1.8A;SOT-223;PD 3.1W;VGS +/-20V
MOSFET P-CH 60V 1.8A SOT223
MOSFET P-CH 60V 1.8A SOT223
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Allied Electronics, Inc. | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRFL9014PBF-ND | 278-IRFL9014PBF | 1046971-IRFL9014PBF | 70078920 | 880-IRFL9014PBF | IRFL9014PBF |
| Product Name | Single FETs, MOSFETs | 60V 1.8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL9014PBF | MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.5Ohm;ID -1.8A;SOT-223;PD 3.1W;VGS +/-20V | MOSFET P-CH 60V 1.8A SOT223 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | |||
| Package Type | SOT223; TO-261-4, TO-261AA | Tube | SOT3; SOT-223 | SOT223 | TO-261-4, TO-261AA | |
| PD | 2000 milliwatts | 2000 to 3100 milliwatts | 3100 milliwatts | 2000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube | Tube; Tube |
