Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IRFL214TRPBF-BE3

Description
Win Source Part Number: 980932-IRFL214TRPBF- BE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 790mA (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 470mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223 Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 76 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: 742-IRFL214TRPBF-BE3 DKR,742-IRFL214TRPBF -BE3TR,742-IRFL214TR PBF-BE3CT Base Product Number: IRFL214 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet
Description
Win Source Part Number: 980932-IRFL214TRPBF- BE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 790mA (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 470mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223 Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 76 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: 742-IRFL214TRPBF-BE3 DKR,742-IRFL214TRPBF -BE3TR,742-IRFL214TR PBF-BE3CT Base Product Number: IRFL214 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 980932-IRFL214TRPBF-BE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
980932-IRFL214TRPBF-BE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 980932-IRFL214TRPBF-BE3
Win Source Part Number: 980932-IRFL214TRPBF- BE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 790mA (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 470mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223 Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 76 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: 742-IRFL214TRPBF-BE3 DKR,742-IRFL214TRPBF -BE3TR,742-IRFL214TR PBF-BE3CT Base Product Number: IRFL214 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 980932-IRFL214TRPBF-BE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 790mA (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 470mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-IRFL214TRPBF-BE3DKR,742-IRFL214TRPBF-BE3TR,742-IRFL214TRPBF-BE3CT
Base Product Number: IRFL214
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now
Single FETs, MOSFETs - 742-IRFL214TRPBF-BE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-IRFL214TRPBF-BE3DKR-ND
Single FETs, MOSFETs 742-IRFL214TRPBF-BE3DKR-ND
N-Channel 250V 790mA (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

N-Channel 250V 790mA (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

Buy Now Datasheet
Single FETs, MOSFETs - 742-IRFL214TRPBF-BE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-IRFL214TRPBF-BE3CT-ND
Single FETs, MOSFETs 742-IRFL214TRPBF-BE3CT-ND
N-Channel 250V 790mA (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

N-Channel 250V 790mA (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

Buy Now Datasheet
Single FETs, MOSFETs - 742-IRFL214TRPBF-BE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-IRFL214TRPBF-BE3TR-ND
Single FETs, MOSFETs 742-IRFL214TRPBF-BE3TR-ND
N-Channel 250V 790mA (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

N-Channel 250V 790mA (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFL214TRPBF-BE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFL214TRPBF-BE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFL214TRPBF-BE3
MOSFET N-CH 250V 790MA SOT223

MOSFET N-CH 250V 790MA SOT223

Supplier's Site
Mosfet, N-Ch, 250V, 0.79A, Sot-223; Channel Type Vishay - 82AH6195 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 250V, 0.79A, Sot-223; Channel Type Vishay
82AH6195
Mosfet, N-Ch, 250V, 0.79A, Sot-223; Channel Type Vishay 82AH6195
MOSFET, N-CH, 250V, 0.79A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:790mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 250V, 0.79A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:790mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N-Ch, 250V, 0.79A, Sot-223; Channel Type Vishay - 78AH6359 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 250V, 0.79A, Sot-223; Channel Type Vishay
78AH6359
Mosfet, N-Ch, 250V, 0.79A, Sot-223; Channel Type Vishay 78AH6359
MOSFET, N-CH, 250V, 0.79A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:790mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 250V, 0.79A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:790mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 980932-IRFL214TRPBF-BE3 742-IRFL214TRPBF-BE3DKR-ND IRFL214TRPBF-BE3 82AH6195
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 250V, 0.79A, Sot-223; Channel Type Vishay
Polarity N-Channel N-Channel
PD 2000 to 3100 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data