Manufacturer: Vishay
Win Source Part Number: 017617-IRFL110TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.3nC @ 10V
Max Input Capacitance: 180pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 540 mOhm @ 900mA, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 100V 1.5A SOT223
N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
POWER FIELD-EFFECT TRANSISTOR, 1.5A I(D), 100V, 0.54OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-261AA, FB MARKING. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 100V 1.5A SOT223
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:2W; Transistor CaseRoHS Compliant: Yes
MOSFET, N CH, 100V, 0.54OHM, 1.5A, SOT-223-4, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:3.1W RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 017617-IRFL110TRPBF | IRFL110TRPBF | IRFL110PBFDKR-ND | 16347265 | IRFL110TRPBF | IRFL110TRPBF | 60AC3691 | 76M9226 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL110TRPBF | Single FETs, MOSFETs | Single FETs, MOSFETs | Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N; Transistor Polarity Vishay | Mosfet, N Ch, 100V, 0.54Ohm, 1.5A, Sot-223-4, Full Reel; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||||
| V(BR)DSS | 100 volts | 100 volts | ||||||
| PD | 2000 to 3100 milliwatts | 2000 milliwatts | 2000 milliwatts | 3100 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3; SOT-223 | SOT223; TO-261-4, TO-261AA | SOT223; TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-3 | TO-3; SOT223 |
