Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL110TRPBF IRFL110TRPBF

Description
Manufacturer: Vishay Win Source Part Number: 017617-IRFL110TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.3nC @ 10V Max Input Capacitance: 180pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 540 mOhm @ 900mA, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 017617-IRFL110TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.3nC @ 10V Max Input Capacitance: 180pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 540 mOhm @ 900mA, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL110TRPBF - 017617-IRFL110TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL110TRPBF
017617-IRFL110TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL110TRPBF 017617-IRFL110TRPBF
Manufacturer: Vishay Win Source Part Number: 017617-IRFL110TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.3nC @ 10V Max Input Capacitance: 180pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 540 mOhm @ 900mA, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 017617-IRFL110TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.3nC @ 10V
Max Input Capacitance: 180pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 540 mOhm @ 900mA, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IRFL110TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFL110TRPBF
Single FETs, MOSFETs IRFL110TRPBF
MOSFET N-CH 100V 1.5A SOT223

MOSFET N-CH 100V 1.5A SOT223

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFL110PBFDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFL110PBFDKR-ND
Single FETs, MOSFETs IRFL110PBFDKR-ND
N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

Buy Now Datasheet
Single FETs, MOSFETs - IRFL110PBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFL110PBFTR-ND
Single FETs, MOSFETs IRFL110PBFTR-ND
N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

Buy Now Datasheet
Single FETs, MOSFETs - IRFL110PBFCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFL110PBFCT-ND
Single FETs, MOSFETs IRFL110PBFCT-ND
N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

Buy Now Datasheet
Transistor - 16347265 - Radwell International
Willingboro, NJ, United States
Transistor
16347265
Transistor 16347265
POWER FIELD-EFFECT TRANSISTOR, 1.5A I(D), 100V, 0.54OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-261AA, FB MARKING. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 1.5A I(D), 100V, 0.54OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-261AA, FB MARKING. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Chan 100V 1.5 Amp

MOSFET N-Chan 100V 1.5 Amp

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFL110TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFL110TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFL110TRPBF
MOSFET N-CH 100V 1.5A SOT223

MOSFET N-CH 100V 1.5A SOT223

Supplier's Site
Mosfet, N; Transistor Polarity Vishay - 60AC3691 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N; Transistor Polarity Vishay
60AC3691
Mosfet, N; Transistor Polarity Vishay 60AC3691
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:2W; Transistor CaseRoHS Compliant: Yes

MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:2W; Transistor CaseRoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Ch, 100V, 0.54Ohm, 1.5A, Sot-223-4, Full Reel; Channel Type Vishay - 76M9226 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 100V, 0.54Ohm, 1.5A, Sot-223-4, Full Reel; Channel Type Vishay
76M9226
Mosfet, N Ch, 100V, 0.54Ohm, 1.5A, Sot-223-4, Full Reel; Channel Type Vishay 76M9226
MOSFET, N CH, 100V, 0.54OHM, 1.5A, SOT-223-4, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:3.1W RoHS Compliant: Yes

MOSFET, N CH, 100V, 0.54OHM, 1.5A, SOT-223-4, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:3.1W RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Radwell International VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017617-IRFL110TRPBF IRFL110TRPBF IRFL110PBFDKR-ND 16347265 IRFL110TRPBF IRFL110TRPBF 60AC3691 76M9226
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL110TRPBF Single FETs, MOSFETs Single FETs, MOSFETs Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N; Transistor Polarity Vishay Mosfet, N Ch, 100V, 0.54Ohm, 1.5A, Sot-223-4, Full Reel; Channel Type Vishay
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 2000 to 3100 milliwatts 2000 milliwatts 2000 milliwatts 3100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT-223 SOT223; TO-261-4, TO-261AA SOT223; TO-261-4, TO-261AA TO-261-4, TO-261AA TO-3 TO-3; SOT223
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