Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIZ34GPBF IRFIZ34GPBF

Description
Manufacturer: Vishay Win Source Part Number: 118030-IRFIZ34GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42W (Tc) Family Name: IRFIZ34G Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 50 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): SiHFIZ34G-E3; SiHFIZ34G; 2SK2311(Q); 2SK2311(TE24R,Q); Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 118030-IRFIZ34GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42W (Tc) Family Name: IRFIZ34G Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 50 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): SiHFIZ34G-E3; SiHFIZ34G; 2SK2311(Q); 2SK2311(TE24R,Q); Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIZ34GPBF - 118030-IRFIZ34GPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIZ34GPBF
118030-IRFIZ34GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIZ34GPBF 118030-IRFIZ34GPBF
Manufacturer: Vishay Win Source Part Number: 118030-IRFIZ34GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42W (Tc) Family Name: IRFIZ34G Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 50 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): SiHFIZ34G-E3; SiHFIZ34G; 2SK2311(Q); 2SK2311(TE24R,Q); Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 118030-IRFIZ34GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 42W (Tc)
Family Name: IRFIZ34G
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 50 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): SiHFIZ34G-E3; SiHFIZ34G; 2SK2311(Q); 2SK2311(TE24R,Q);
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFIZ34GPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFIZ34GPBF-ND
Single FETs, MOSFETs IRFIZ34GPBF-ND
N-Channel 60V 20A (Tc) 42W (Tc) Through Hole TO-220-3

N-Channel 60V 20A (Tc) 42W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore
N-Channel 60V 20A TO-220 MOSFET Transistor
2088-IRFIZ34GPBF
N-Channel 60V 20A TO-220 MOSFET Transistor 2088-IRFIZ34GPBF
N-Channel MOSFET, 60V, 20A, 50mR Rds On, TO-220 Product overview: IRFIZ34GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 20A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 20A, TO-220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IRFIZ34GPBF can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 60V, 20A, 50mR Rds On, TO-220 Product overview: IRFIZ34GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 20A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 20A, TO-220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IRFIZ34GPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-CH 60V HEXFET MOSFET

MOSFET N-CH 60V HEXFET MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFIZ34GPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFIZ34GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFIZ34GPBF
MOSFET N-CH 60V 20A TO220-3

MOSFET N-CH 60V 20A TO220-3

Supplier's Site
Mosfet, N-Ch, 60V, 20A, To-220 Rohs Compliant Vishay - 56AJ9872 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 20A, To-220 Rohs Compliant Vishay
56AJ9872
Mosfet, N-Ch, 60V, 20A, To-220 Rohs Compliant Vishay 56AJ9872
MOSFET, N-CH, 60V, 20A, TO-220 ROHS COMPLIANT: YES

MOSFET, N-CH, 60V, 20A, TO-220 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 118030-IRFIZ34GPBF IRFIZ34GPBF-ND 2088-IRFIZ34GPBF IRFIZ34GPBF IRFIZ34GPBF 56AJ9872
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIZ34GPBF Single FETs, MOSFETs N-Channel 60V 20A TO-220 MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 60V, 20A, To-220 Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts
PD 42000 milliwatts 42000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - UJ3C120070K3S - ODG (Origin Data Global)
Specs
Polarity N-Channel; N-Channel
Transistor Technology / Material SiCFET (Cascode SiCJFET)
V(BR)DSS 1200 volts
View Details
3 suppliers