Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBF30GPBF IRFIBF30GPBF

Description
Manufacturer: Vishay Win Source Part Number: 120106-IRFIBF30GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 1.9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.7 Ohm @ 1.1A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 120106-IRFIBF30GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 1.9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.7 Ohm @ 1.1A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBF30GPBF - 120106-IRFIBF30GPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBF30GPBF
120106-IRFIBF30GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBF30GPBF 120106-IRFIBF30GPBF
Manufacturer: Vishay Win Source Part Number: 120106-IRFIBF30GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 1.9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.7 Ohm @ 1.1A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 120106-IRFIBF30GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 1.9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.7 Ohm @ 1.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 742-IRFIBF30GPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-IRFIBF30GPBF-ND
Single FETs, MOSFETs 742-IRFIBF30GPBF-ND
N-Channel 900V 1.9A (Tc) 35W (Tc) Through Hole TO-220-3

N-Channel 900V 1.9A (Tc) 35W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore
N-Channel 900V 1.9A TO-220 MOSFET Transistor
278-IRFIBF30GPBF
N-Channel 900V 1.9A TO-220 MOSFET Transistor 278-IRFIBF30GPBF
900V N-Channel MOSFET, 1.9A, 3.7R, TO-220 Product overview: IRFIBF30GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V, 1.9A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 1.9A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIBF30GPBF can be used for catalog matching and distributor lookup.

900V N-Channel MOSFET, 1.9A, 3.7R, TO-220 Product overview: IRFIBF30GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V, 1.9A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 1.9A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIBF30GPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFIBF30GPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFIBF30GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFIBF30GPBF
MOSFET N-CH 900V 1.9A TO220-3

MOSFET N-CH 900V 1.9A TO220-3

Supplier's Site
N Channel Mosfet, 900V, 1.9A, To-220Fp; Channel Type Vishay - 63J6735 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 900V, 1.9A, To-220Fp; Channel Type Vishay
63J6735
N Channel Mosfet, 900V, 1.9A, To-220Fp; Channel Type Vishay 63J6735
N CHANNEL MOSFET, 900V, 1.9A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.9A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 900V, 1.9A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.9A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-CH 900V HEXFET MOSFET

MOSFET N-CH 900V HEXFET MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 120106-IRFIBF30GPBF 742-IRFIBF30GPBF-ND 278-IRFIBF30GPBF IRFIBF30GPBF 63J6735 IRFIBF30GPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBF30GPBF Single FETs, MOSFETs N-Channel 900V 1.9A TO-220 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 900V, 1.9A, To-220Fp; Channel Type Vishay MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 900 volts
PD 35000 milliwatts 35000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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