900V N-Channel MOSFET, 1.9A, 3.7R, TO-220 Product overview: IRFIBF30GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V, 1.9A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 1.9A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIBF30GPBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 120106-IRFIBF30GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 1.9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.7 Ohm @ 1.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
N-Channel 900V 1.9A (Tc) 35W (Tc) Through Hole TO-220-3
N CHANNEL MOSFET, 900V, 1.9A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.9A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 900V 1.9A TO220-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRFIBF30GPBF | 120106-IRFIBF30GPBF | 742-IRFIBF30GPBF-ND | 63J6735 | IRFIBF30GPBF | IRFIBF30GPBF |
| Product Name | N-Channel 900V 1.9A TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBF30GPBF | Single FETs, MOSFETs | N Channel Mosfet, 900V, 1.9A, To-220Fp; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| PD | 35000 milliwatts | 35000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 900 volts |
