Vishay Precision Group Single FETs, MOSFETs IRFIBF30GPBF

Description
N-Channel 900V 1.9A (Tc) 35W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 900V 1.9A (Tc) 35W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 742-IRFIBF30GPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-IRFIBF30GPBF-ND
Single FETs, MOSFETs 742-IRFIBF30GPBF-ND
N-Channel 900V 1.9A (Tc) 35W (Tc) Through Hole TO-220-3

N-Channel 900V 1.9A (Tc) 35W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBF30GPBF - 120106-IRFIBF30GPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBF30GPBF
120106-IRFIBF30GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBF30GPBF 120106-IRFIBF30GPBF
Manufacturer: Vishay Win Source Part Number: 120106-IRFIBF30GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 1.9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.7 Ohm @ 1.1A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 120106-IRFIBF30GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 1.9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.7 Ohm @ 1.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFIBF30GPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFIBF30GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFIBF30GPBF
MOSFET N-CH 900V 1.9A TO220-3

MOSFET N-CH 900V 1.9A TO220-3

Supplier's Site
N Channel Mosfet, 900V, 1.9A, To-220Fp; Channel Type Vishay - 63J6735 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 900V, 1.9A, To-220Fp; Channel Type Vishay
63J6735
N Channel Mosfet, 900V, 1.9A, To-220Fp; Channel Type Vishay 63J6735
N CHANNEL MOSFET, 900V, 1.9A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.9A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 900V, 1.9A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.9A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-CH 900V HEXFET MOSFET

MOSFET N-CH 900V HEXFET MOSFET

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 742-IRFIBF30GPBF-ND 120106-IRFIBF30GPBF IRFIBF30GPBF 63J6735 IRFIBF30GPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBF30GPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 900V, 1.9A, To-220Fp; Channel Type Vishay MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab TO-220; SOT3; TO-220-3 TO-220; TO-220-3 Full Pack, Isolated Tab TO-3; TO-220
V(BR)DSS 900 volts
PD 35000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - AUIRFR2905ZTRL-ND - DigiKey
Specs
Polarity N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63
Transistor Grade / Operating Range Automotive
View Details
7 suppliers