N-Channel 900V 1.2A (Tc) 30W (Tc) Through Hole TO-220-3
N CHANNEL MOSFET, 900V, 1.2A TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:1.2A; DRAIN SOURCE VOLTAGE VDS:900V; ON RESISTANCE RDS(ON):8OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; PRODUCT RANGE:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: Vishay Siliconix
Win Source Part Number: 759706-IRFIBF20GPBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Maximum): 30W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 900V
Id - Continuous Drain Current: 1.2A
Rds On (Maximum) at Id, Vgs: 8Ohm at 720mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 38nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 490pF at 25V
N CHANNEL MOSFET, 900V, 1.2A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 900V 1.2A TO220-3
| DigiKey | Radwell International | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-IRFIBF20GPBF-ND | 16347217 | 759706-IRFIBF20GPBF | 63J6734 | IRFIBF20GPBF | IRFIBF20GPBF |
| Product Name | Single FETs, MOSFETs | Transistor | FETs - Single - IRFIBF20GPBF | N Channel Mosfet, 900V, 1.2A To-220; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-220; TO-220-3 Full Pack, Isolated Tab | TO-220; SOT3 | TO-3; TO-220 | TO-220; TO-220-3 Full Pack, Isolated Tab | ||
| V(BR)DSS | 900 volts | |||||
| PD | 30000 milliwatts |
