Vishay Precision Group Transistor IRFIBF20GPBF

Description
N CHANNEL MOSFET, 900V, 1.2A TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:1.2A; DRAIN SOURCE VOLTAGE VDS:900V; ON RESISTANCE RDS(ON):8OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; PRODUCT RANGE:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
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Description
N CHANNEL MOSFET, 900V, 1.2A TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:1.2A; DRAIN SOURCE VOLTAGE VDS:900V; ON RESISTANCE RDS(ON):8OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; PRODUCT RANGE:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
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Suppliers

Company
Product
Description
Supplier Links
Transistor - 16347217 - Radwell International
Willingboro, NJ, United States
Transistor
16347217
Transistor 16347217
N CHANNEL MOSFET, 900V, 1.2A TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:1.2A; DRAIN SOURCE VOLTAGE VDS:900V; ON RESISTANCE RDS(ON):8OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; PRODUCT RANGE:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 900V, 1.2A TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:1.2A; DRAIN SOURCE VOLTAGE VDS:900V; ON RESISTANCE RDS(ON):8OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; PRODUCT RANGE:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - 742-IRFIBF20GPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-IRFIBF20GPBF-ND
Single FETs, MOSFETs 742-IRFIBF20GPBF-ND
N-Channel 900V 1.2A (Tc) 30W (Tc) Through Hole TO-220-3

N-Channel 900V 1.2A (Tc) 30W (Tc) Through Hole TO-220-3

Buy Now Datasheet
FETs - Single - IRFIBF20GPBF - 759706-IRFIBF20GPBF - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFIBF20GPBF
759706-IRFIBF20GPBF
FETs - Single - IRFIBF20GPBF 759706-IRFIBF20GPBF
Manufacturer: Vishay Siliconix Win Source Part Number: 759706-IRFIBF20GPBF Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Full Pack, Isolated Tab Power Dissipation (Maximum): 30W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 900V Id - Continuous Drain Current: 1.2A Rds On (Maximum) at Id, Vgs: 8Ohm at 720mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 38nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 490pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 759706-IRFIBF20GPBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Maximum): 30W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 900V
Id - Continuous Drain Current: 1.2A
Rds On (Maximum) at Id, Vgs: 8Ohm at 720mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 38nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 490pF at 25V

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Sheung Wan, Hong Kong
MOSFET N-CH 900V HEXFET MOSFET

MOSFET N-CH 900V HEXFET MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFIBF20GPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFIBF20GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFIBF20GPBF
MOSFET N-CH 900V 1.2A TO220-3

MOSFET N-CH 900V 1.2A TO220-3

Supplier's Site
N Channel Mosfet, 900V, 1.2A To-220; Channel Type Vishay - 63J6734 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 900V, 1.2A To-220; Channel Type Vishay
63J6734
N Channel Mosfet, 900V, 1.2A To-220; Channel Type Vishay 63J6734
N CHANNEL MOSFET, 900V, 1.2A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 900V, 1.2A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Radwell International DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 16347217 742-IRFIBF20GPBF-ND 759706-IRFIBF20GPBF IRFIBF20GPBF IRFIBF20GPBF 63J6734
Product Name Transistor Single FETs, MOSFETs FETs - Single - IRFIBF20GPBF MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 900V, 1.2A To-220; Channel Type Vishay
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab TO-220; SOT3 TO-220; TO-220-3 Full Pack, Isolated Tab TO-3; TO-220
V(BR)DSS 900 volts
PD 30000 milliwatts
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