900V 1.2A N-Channel MOSFET TO-220 8R Product overview: IRFIBF20GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V, 1.2A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 1.2A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIBF20GPBF can be used for catalog matching and distributor lookup.
N-Channel 900V 1.2A (Tc) 30W (Tc) Through Hole TO-220-3
Manufacturer: Vishay Siliconix
Win Source Part Number: 759706-IRFIBF20GPBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Maximum): 30W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 900V
Id - Continuous Drain Current: 1.2A
Rds On (Maximum) at Id, Vgs: 8Ohm at 720mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 38nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 490pF at 25V
MOSFET N-CH 900V 1.2A TO220-3
N CHANNEL MOSFET, 900V, 1.2A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
N CHANNEL MOSFET, 900V, 1.2A TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:1.2A; DRAIN SOURCE VOLTAGE VDS:900V; ON RESISTANCE RDS(ON):8OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; PRODUCT RANGE:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFIBF20GPBF | 742-IRFIBF20GPBF-ND | 759706-IRFIBF20GPBF | IRFIBF20GPBF | 63J6734 | 16347217 | IRFIBF20GPBF |
| Product Name | N-Channel 900V 1.2A TO-220 MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - IRFIBF20GPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 900V, 1.2A To-220; Channel Type Vishay | Transistor | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 30000 milliwatts | 30000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-220; TO-220-3 Full Pack, Isolated Tab | TO-220; SOT3 | TO-220; TO-220-3 Full Pack, Isolated Tab | TO-3; TO-220 |
