Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFIBC20GPBF

Description
N-Channel 600V 1.7A (Tc) 30W (Tc) Through Hole TO-220-3
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Description
N-Channel 600V 1.7A (Tc) 30W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - IRFIBC20GPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFIBC20GPBF-ND
Single FETs, MOSFETs IRFIBC20GPBF-ND
N-Channel 600V 1.7A (Tc) 30W (Tc) Through Hole TO-220-3

N-Channel 600V 1.7A (Tc) 30W (Tc) Through Hole TO-220-3

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBC20GPBF - 100110-IRFIBC20GPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBC20GPBF
100110-IRFIBC20GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBC20GPBF 100110-IRFIBC20GPBF
Manufacturer: Vishay Win Source Part Number: 100110-IRFIBC20GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.4 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 100110-IRFIBC20GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.4 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

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Sheung Wan, Hong Kong
MOSFET N-CH 600V HEXFET MOSFET

MOSFET N-CH 600V HEXFET MOSFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFIBC20GPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFIBC20GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFIBC20GPBF
MOSFET N-CH 600V 1.7A TO220-3

MOSFET N-CH 600V 1.7A TO220-3

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFIBC20GPBF-ND 100110-IRFIBC20GPBF IRFIBC20GPBF IRFIBC20GPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBC20GPBF MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab TO-220; SOT3; TO-220-3 TO-220; TO-220-3 Full Pack, Isolated Tab
V(BR)DSS 600 volts
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