Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFIB8N50KPBF

Description
N-Channel 500V 6.7A (Tc) 45W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 500V 6.7A (Tc) 45W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFIB8N50KPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFIB8N50KPBF-ND
Single FETs, MOSFETs IRFIB8N50KPBF-ND
N-Channel 500V 6.7A (Tc) 45W (Tc) Through Hole TO-220-3

N-Channel 500V 6.7A (Tc) 45W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore
500V 6.7A TO220 MOSFET Transistor
278-IRFIB8N50KPBF
500V 6.7A TO220 MOSFET Transistor 278-IRFIB8N50KPBF
MOSFET N-CH 500V 6.7A TO220-3 Product overview: IRFIB8N50KPBF from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 6.7A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 6.7A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIB8N50KPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 6.7A TO220-3 Product overview: IRFIB8N50KPBF from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 6.7A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 6.7A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIB8N50KPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIB8N50KPBF - 1046957-IRFIB8N50KPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIB8N50KPBF
1046957-IRFIB8N50KPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIB8N50KPBF 1046957-IRFIB8N50KPBF
Manufacturer: Vishay Win Source Part Number: 1046957-IRFIB8N50KPB F Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 6.7A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 89nC @ 10V Max Input Capacitance: 2160pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 350 mOhm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1046957-IRFIB8N50KPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 6.7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 89nC @ 10V
Max Input Capacitance: 2160pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 350 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFIB8N50KPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFIB8N50KPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFIB8N50KPBF
MOSFET N-CH 500V 6.7A TO220-3

MOSFET N-CH 500V 6.7A TO220-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFIB8N50KPBF-ND 278-IRFIB8N50KPBF 1046957-IRFIB8N50KPBF IRFIB8N50KPBF
Product Name Single FETs, MOSFETs 500V 6.7A TO220 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIB8N50KPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab Tube TO-220; SOT3; TO-220-3 TO-220; TO-220-3 Full Pack, Isolated Tab
PD 45000 milliwatts 45000 milliwatts
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