Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFIB7N50LPBF

Description
N-Channel 500V 6.8A (Tc) 46W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 500V 6.8A (Tc) 46W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFIB7N50LPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFIB7N50LPBF-ND
Single FETs, MOSFETs IRFIB7N50LPBF-ND
N-Channel 500V 6.8A (Tc) 46W (Tc) Through Hole TO-220-3

N-Channel 500V 6.8A (Tc) 46W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore
500V 6.8A TO220 MOSFET Transistor
278-IRFIB7N50LPBF
500V 6.8A TO220 MOSFET Transistor 278-IRFIB7N50LPBF
MOSFET N-CH 500V 6.8A TO220-3 Product overview: IRFIB7N50LPBF from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 6.8A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 6.8A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIB7N50LPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 6.8A TO220-3 Product overview: IRFIB7N50LPBF from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 6.8A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 6.8A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIB7N50LPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIB7N50LPBF - 1046955-IRFIB7N50LPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIB7N50LPBF
1046955-IRFIB7N50LPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIB7N50LPBF 1046955-IRFIB7N50LPBF
Manufacturer: Vishay Win Source Part Number: 1046955-IRFIB7N50LPB F Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 46W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 6.8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 92nC @ 10V Max Input Capacitance: 2220pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 380 mOhm @ 4.1A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1046955-IRFIB7N50LPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 46W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 6.8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 92nC @ 10V
Max Input Capacitance: 2220pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 4.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFIB7N50LPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFIB7N50LPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFIB7N50LPBF
MOSFET N-CH 500V 6.8A TO220-3

MOSFET N-CH 500V 6.8A TO220-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFIB7N50LPBF-ND 278-IRFIB7N50LPBF 1046955-IRFIB7N50LPBF IRFIB7N50LPBF
Product Name Single FETs, MOSFETs 500V 6.8A TO220 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIB7N50LPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab Tube TO-220; SOT3; TO-220-3 TO-220; TO-220-3 Full Pack, Isolated Tab
PD 46000 milliwatts 46000 milliwatts
Unlock Full Specs
to access all available technical data