Vishay Intertechnology, Inc. N-Channel 6.8A 500V 0.38ohm MOSFET Transistor IRFIB7N50L

Power Field-Effect Transistor, 6.8A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULL PACK-3 Product overview: IRFIB7N50L from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 6.8A, 500V, 0.38ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 6.8A, 500V, 0.38ohm, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFIB7N50L can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 160471-IRFIB7N50L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 46W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 6.8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 92nC @ 10V
Max Input Capacitance: 2220pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 4.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance